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Bülbül, M. M., Bengi, S., Dökme, İ., Altındal, Ş., Tunç, T. (2010) Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes. Journal of Applied Physics, 108 (3). 34517pp. doi:10.1063/1.3462427

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes
JournalJournal of Applied Physics
AuthorsBülbül, M. M.Author
Bengi, S.Author
Dökme, İ.Author
Altındal, Ş.Author
Tunç, T.Author
Year2010 (August)Volume108
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3462427Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5176156Long-form Identifiermindat:1:5:5176156:9
GUID0
Full ReferenceBülbül, M. M., Bengi, S., Dökme, İ., Altındal, Ş., Tunç, T. (2010) Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes. Journal of Applied Physics, 108 (3). 34517pp. doi:10.1063/1.3462427
Plain TextBülbül, M. M., Bengi, S., Dökme, İ., Altındal, Ş., Tunç, T. (2010) Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes. Journal of Applied Physics, 108 (3). 34517pp. doi:10.1063/1.3462427
In(2010, August) Journal of Applied Physics Vol. 108 (3) AIP Publishing

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Dökme, İlbilge, Tunç, T., Uslu, İ., Altındal, Ş. (2011) The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices. Synthetic Metals, 161 (5). 474-480 doi:10.1016/j.synthmet.2011.01.002
Uslu, Habibe, Altındal, Şemsettin, Dökme, İlbilge (2010) Illumination effect on electrical characteristics of organic-based Schottky barrier diodes. Journal of Applied Physics, 108 (10). 104501pp. doi:10.1063/1.3504598
Gökçen, M., Altındal, Ş., Karaman, M., Aydemir, U. (2011) Forward and reverse bias current–voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer. Physica B: Condensed Matter, 406 (21). 4119-4123 doi:10.1016/j.physb.2011.08.006
Alialy, S., Altındal, Ş., Tanrıkulu, E. E., Yıldız, D. E. (2014) Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes. Journal of Applied Physics, 116 (8). 83709pp. doi:10.1063/1.4893970
Çetinkaya, H G, Bengi, S, Sevgili, O, Altındal, Ş (2024) The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures. Physica Scripta, 99 (2) 25955 doi:10.1088/1402-4896/ad1c2b
Bilkan, Ç., Badali, Y., Fotouhi-Shablou, S., Azizian-Kalandaragh, Y., Altındal, Ş. (2017) On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes. Applied Physics A, 123. doi:10.1007/s00339-017-1168-y
Tataroğlu, A., Altındal, Ş., Bülbül, M.M. (2006) 60Co γ irradiation effects on the current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 568 (2). 863-868 doi:10.1016/j.nima.2006.08.047
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Uslu, H., Dökme, İ., Afandiyeva, I. M., Altındal, Ş. (2010) Illumination effect on I-V, C-V and G/w-V characteristics of AlTiWPd2Si/nSi structures at room temperature. Surface and Interface Analysis, 42 (6). 807-811 doi:10.1002/sia.3358
Taşçıoğlu, İlke, Aydemir, Umut, Altındal, Şemsettin (2010) The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer. Journal of Applied Physics, 108 (6). 64506pp. doi:10.1063/1.3468376
Dökme, İ., Altındal, Ş. (2007) The C–V–f and G/ω–V–f characteristics of Au/SiO2/n-Si capacitors. Physica B: Condensed Matter, 391 (1). 59-64 doi:10.1016/j.physb.2006.08.049
 
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