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Alialy, S., Altındal, Ş., Tanrıkulu, E. E., Yıldız, D. E. (2014) Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes. Journal of Applied Physics, 116 (8). 83709pp. doi:10.1063/1.4893970

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
JournalJournal of Applied Physics
AuthorsAlialy, S.Author
Altındal, Ş.Author
Tanrıkulu, E. E.Author
Yıldız, D. E.Author
Year2014 (August 28)Volume116
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.4893970Search in ResearchGate
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Mindat Ref. ID5200355Long-form Identifiermindat:1:5:5200355:0
GUID0
Full ReferenceAlialy, S., Altındal, Ş., Tanrıkulu, E. E., Yıldız, D. E. (2014) Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes. Journal of Applied Physics, 116 (8). 83709pp. doi:10.1063/1.4893970
Plain TextAlialy, S., Altındal, Ş., Tanrıkulu, E. E., Yıldız, D. E. (2014) Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes. Journal of Applied Physics, 116 (8). 83709pp. doi:10.1063/1.4893970
In(2014, August) Journal of Applied Physics Vol. 116 (8) AIP Publishing

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Tanrıkulu, E E, Yıldız, D E, Günen, A, Altındal, Ş (2015) Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes. Physica Scripta, 90 (9). 95801pp. doi:10.1088/0031-8949/90/9/095801
Yıldız, D. E., Altındal, Ş., Kanbur, H. (2008) Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes. Journal of Applied Physics, 103 (12). 124502pp. doi:10.1063/1.2936963
Çetinkaya, H. G., Yıldız, D. E., Altındal, Ş. (2015) On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity. International Journal of Modern Physics B, 29 (1). 1450237pp. doi:10.1142/s0217979214502373
Bilkan, Ç., Badali, Y., Fotouhi-Shablou, S., Azizian-Kalandaragh, Y., Altındal, Ş. (2017) On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes. Applied Physics A, 123. doi:10.1007/s00339-017-1168-y
Altındal, Ş., Kanbur, H., Yıldız, D.E., Parlak, M. (2007) Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures. Applied Surface Science, 253. 5056-5061 doi:10.1016/j.apsusc.2006.11.015
Bülbül, M. M., Bengi, S., Dökme, İ., Altındal, Ş., Tunç, T. (2010) Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes. Journal of Applied Physics, 108 (3). 34517pp. doi:10.1063/1.3462427
Mangal, Sutanu, Banerji, P. (2009) Studies on metal/n-GaAs Schottky barrier diodes: The effects of temperature and carrier concentrations. Journal of Applied Physics, 105 (8). 83709pp. doi:10.1063/1.3110065
Pakma, O., Serin, N., Serin, T., Altındal, Ş. (2008) The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures. Journal of Applied Physics, 104 (1). 14501pp. doi:10.1063/1.2952028
Huang, Lingqin, Xia, Mali, Ma, Yue, Gu, Xiaogang (2020) Modulating Schottky barrier of metal/p-type 4H-SiC by thin insulator TiO2 layer intercalation. Journal of Applied Physics, 127 (22) 225301pp. doi:10.1063/1.5127564
Yıldız, D. E., Dökme, İ. (2011) Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes. Journal of Applied Physics, 110 (1). 14507pp. doi:10.1063/1.3602090
Alialy, S., Kaya, A., Marıl, E., Altındal, Ş., Uslu, İ. (2015) Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range. Philosophical Magazine, 95 (13). 1448-1461 doi:10.1080/14786435.2015.1033029
 
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