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Shin, Jungho, Kim, Insung, Biju, Kuyyadi P., Jo, Minseok, Park, Jubong, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang (2011) TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application. Journal of Applied Physics, 109 (3). 33712pp. doi:10.1063/1.3544205

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Reference TypeJournal (article/letter/editorial)
TitleTiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
JournalJournal of Applied Physics
AuthorsShin, JunghoAuthor
Kim, InsungAuthor
Biju, Kuyyadi P.Author
Jo, MinseokAuthor
Park, JubongAuthor
Lee, JoonmyoungAuthor
Jung, SeungjaeAuthor
Lee, WootaeAuthor
Kim, SeonghyunAuthor
Park, SangsuAuthor
Hwang, HyunsangAuthor
Year2011 (February)Volume109
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3544205Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5180010Long-form Identifiermindat:1:5:5180010:5
GUID0
Full ReferenceShin, Jungho, Kim, Insung, Biju, Kuyyadi P., Jo, Minseok, Park, Jubong, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang (2011) TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application. Journal of Applied Physics, 109 (3). 33712pp. doi:10.1063/1.3544205
Plain TextShin, Jungho, Kim, Insung, Biju, Kuyyadi P., Jo, Minseok, Park, Jubong, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang (2011) TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application. Journal of Applied Physics, 109 (3). 33712pp. doi:10.1063/1.3544205
In(2011, February) Journal of Applied Physics Vol. 109 (3) AIP Publishing


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