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Johnson, B. C., Ohshima, T., McCallum, J. C. (2012) Dopant effects on solid phase epitaxy in silicon and germanium. Journal of Applied Physics, 111 (3). 34906pp. doi:10.1063/1.3682532

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Reference TypeJournal (article/letter/editorial)
TitleDopant effects on solid phase epitaxy in silicon and germanium
JournalJournal of Applied Physics
AuthorsJohnson, B. C.Author
Ohshima, T.Author
McCallum, J. C.Author
Year2012 (February)Volume111
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3682532Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5188019Long-form Identifiermindat:1:5:5188019:2
GUID0
Full ReferenceJohnson, B. C., Ohshima, T., McCallum, J. C. (2012) Dopant effects on solid phase epitaxy in silicon and germanium. Journal of Applied Physics, 111 (3). 34906pp. doi:10.1063/1.3682532
Plain TextJohnson, B. C., Ohshima, T., McCallum, J. C. (2012) Dopant effects on solid phase epitaxy in silicon and germanium. Journal of Applied Physics, 111 (3). 34906pp. doi:10.1063/1.3682532
In(2012, February) Journal of Applied Physics Vol. 111 (3) AIP Publishing

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Johnson, B. C., Gortmaker, P., McCallum, J. C. (2008) Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium. Physical Review B, 77 (21) doi:10.1103/physrevb.77.214109
Johnson, B. C., McCallum, J. C. (2004) Kinetics of arsenic-enhanced solid phase epitaxy in silicon. Journal of Applied Physics, 95 (8). 4427-4431 doi:10.1063/1.1682672
Johnson, B. C., McCallum, J. C. (2007) Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers. Physical Review B, 76 (4) doi:10.1103/physrevb.76.045216
Johnson, B. C., McCallum, J. C. (2004) Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon. Journal of Applied Physics, 96 (4). 2381-2385 doi:10.1063/1.1768616
Pyke, D. J., McCallum, J. C., Johnson, B. C. (2010) Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers. Journal of Applied Physics, 108 (4). 44901pp. doi:10.1063/1.3465547
Johnson, B. C., Villis, B. J., Burgess, J. E., Stavrias, N., McCallum, J. C., Charnvanichborikarn, S., Wong-Leung, J., Jagadish, C., Williams, J. S. (2012) Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon. Journal of Applied Physics, 111 (9). 94910pp. doi:10.1063/1.4710991
Lew, C. T.-K., Sewani, V. K., Ohshima, T., McCallum, J. C., Johnson, B. C. (2023) Charge pumping electrically detected magnetic resonance of silicon carbide power transistors. Journal of Applied Physics, 134 (5) AIP Publishing. doi:10.1063/5.0167650
Lew, C. T.-K., Sewani, V. K., Iwamoto, N., Ohshima, T., McCallum, J. C., Johnson, B. C. (2023) Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide. Applied Physics Letters, 122 (23) doi:10.1063/5.0154382
Radek, M., Bracht, H., Johnson, B. C., McCallum, J. C., Posselt, M., Liedke, B. (2015) Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium. Applied Physics Letters, 107 (8). 82112pp. doi:10.1063/1.4929839
Parker, R. A., Dontschuk, N., Sato, S.-I., Lew, C. T.-K., Reineck, P., Nadarajah, A., Ohshima, T., Gibson, B. C., Castelletto, S., McCallum, J. C., Johnson, B. C. (2021) Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars. Journal of Applied Physics, 130 (14) 145101pp. doi:10.1063/5.0055100
Johnson, B. C., McCallum, J. C. (2004) Ion-channeling and Raman scattering study of damage accumulation in silicon. Journal of Applied Physics, 95 (3). 1096-1101 doi:10.1063/1.1636814
 
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