Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Johnson, B. C., Villis, B. J., Burgess, J. E., Stavrias, N., McCallum, J. C., Charnvanichborikarn, S., Wong-Leung, J., Jagadish, C., Williams, J. S. (2012) Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon. Journal of Applied Physics, 111 (9). 94910pp. doi:10.1063/1.4710991

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
JournalJournal of Applied Physics
AuthorsJohnson, B. C.Author
Villis, B. J.Author
Burgess, J. E.Author
Stavrias, N.Author
McCallum, J. C.Author
Charnvanichborikarn, S.Author
Wong-Leung, J.Author
Jagadish, C.Author
Williams, J. S.Author
Year2012 (May)Volume111
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.4710991Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5189567Long-form Identifiermindat:1:5:5189567:1
GUID0
Full ReferenceJohnson, B. C., Villis, B. J., Burgess, J. E., Stavrias, N., McCallum, J. C., Charnvanichborikarn, S., Wong-Leung, J., Jagadish, C., Williams, J. S. (2012) Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon. Journal of Applied Physics, 111 (9). 94910pp. doi:10.1063/1.4710991
Plain TextJohnson, B. C., Villis, B. J., Burgess, J. E., Stavrias, N., McCallum, J. C., Charnvanichborikarn, S., Wong-Leung, J., Jagadish, C., Williams, J. S. (2012) Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon. Journal of Applied Physics, 111 (9). 94910pp. doi:10.1063/1.4710991
In(2012, May) Journal of Applied Physics Vol. 111 (9) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

McCallum, J. C., Villis, B. J., Johnson, B. C., Stavrias, N., Burgess, J. E., Charnvanichborikarn, S., Wong-Leung, J., Williams, J. S., Jagadish, C. (2011) Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon. physica status solidi (a), 208 (3). 620-623 doi:10.1002/pssa.201000380
Charnvanichborikarn, S., Villis, B. J., Johnson, B. C., Wong-Leung, J., McCallum, J. C., Williams, J. S., Jagadish, C. (2010) Effect of boron on interstitial-related luminescence centers in silicon. Applied Physics Letters, 96 (5). 51906pp. doi:10.1063/1.3300836
Johnson, B. C., Ohshima, T., McCallum, J. C. (2012) Dopant effects on solid phase epitaxy in silicon and germanium. Journal of Applied Physics, 111 (3). 34906pp. doi:10.1063/1.3682532
Wong, S., Johnson, B. C., Haberl, B., Mujica, A., McCallum, J. C., Williams, J. S., Bradby, J. E. (2019) Thermal evolution of the indentation-induced phases of silicon. Journal of Applied Physics, 126 (10). 105901pp. doi:10.1063/1.5108751
Pellegrino, P., Lévêque, P., Wong-Leung, J., Jagadish, C., Svensson, B. G. (2001) Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation. Applied Physics Letters, 78 (22). 3442-3444 doi:10.1063/1.1374960
Lévêque, P., Nielsen, H. Kortegaard, Pellegrino, P., Hallén, A., Svensson, B. G., Kuznetsov, A. Yu., Wong-Leung, J., Jagadish, C., Privitera, V. (2003) Vacancy and interstitial depth profiles in ion-implanted silicon. Journal of Applied Physics, 93 (2). 871-877 doi:10.1063/1.1528304
Williams, J. S., Conway, M. J., Williams, B. C., Wong-Leung, J. (2001) Direct observation of voids in the vacancy excess region of ion bombarded silicon. Applied Physics Letters, 78 (19). 2867-2869 doi:10.1063/1.1352662
Vines, L., Wong-Leung, J., Jagadish, C., Quemener, V., Monakhov, E. V., Svensson, B. G. (2012) Acceptor-like deep level defects in ion-implanted ZnO. Applied Physics Letters, 100 (21). 212106pp. doi:10.1063/1.4720514
Harding, Ruth E., Davies, Gordon, Hayama, S., Coleman, P. G., Burrows, C. P., Wong-Leung, J. (2006) Photoluminescence response of ion-implanted silicon. Applied Physics Letters, 89 (18). 181917pp. doi:10.1063/1.2378402
Charnvanichborikarn, S., Wong-Leung, J., Williams, J. S. (2009) Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation. Journal of Applied Physics, 106 (10). 103526pp. doi:10.1063/1.3262621
Harding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P., Wong-Leung, J. (2006) Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. Journal of Applied Physics, 100 (7). 73501pp. doi:10.1063/1.2354332
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 20, 2025 00:47:05
Go to top of page