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Chen, Wenchao, Rinzler, Andrew G., Guo, Jing (2013) Modeling and simulation of carbon nanotube-semiconductor heterojunction vertical field effect transistors. Journal of Applied Physics, 113 (23). 234501pp. doi:10.1063/1.4811295

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Reference TypeJournal (article/letter/editorial)
TitleModeling and simulation of carbon nanotube-semiconductor heterojunction vertical field effect transistors
JournalJournal of Applied Physics
AuthorsChen, WenchaoAuthor
Rinzler, Andrew G.Author
Guo, JingAuthor
Year2013 (June 21)Volume113
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.4811295Search in ResearchGate
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Mindat Ref. ID5193255Long-form Identifiermindat:1:5:5193255:6
GUID0
Full ReferenceChen, Wenchao, Rinzler, Andrew G., Guo, Jing (2013) Modeling and simulation of carbon nanotube-semiconductor heterojunction vertical field effect transistors. Journal of Applied Physics, 113 (23). 234501pp. doi:10.1063/1.4811295
Plain TextChen, Wenchao, Rinzler, Andrew G., Guo, Jing (2013) Modeling and simulation of carbon nanotube-semiconductor heterojunction vertical field effect transistors. Journal of Applied Physics, 113 (23). 234501pp. doi:10.1063/1.4811295
In(2013, June) Journal of Applied Physics Vol. 113 (23) AIP Publishing

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Chen, Wenchao, Rinzler, Andrew, Guo, Jing (2013) Computational study of graphene-based vertical field effect transistor. Journal of Applied Physics, 113 (9). 94507pp. doi:10.1063/1.4794508
Chen, Wenchao, Seol, Gyungseon, Rinzler, Andrew G., Guo, Jing (2012) Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell. Applied Physics Letters, 100 (10). 103503pp. doi:10.1063/1.3693377
Liu, Bo, McCarthy, Mitchell A., Yoon, Youngki, Kim, Do Young, Wu, Zhuangchun, So, Franky, Holloway, Paul H., Reynolds, John R., Guo, Jing, Rinzler, Andrew G. (2008) Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors. Advanced Materials, 20. 3605-3609 doi:10.1002/adma.200800601
Wang, Po-Hsiang, Liu, Bo, Shen, Yu, Zheng, Ying, McCarthy, Mitchell A., Holloway, Paul, Rinzler, Andrew G. (2012) N-channel carbon nanotube enabled vertical field effect transistors with solution deposited ZnO nanoparticle based channel layers. Applied Physics Letters, 100 (17). 173514pp. doi:10.1063/1.4709618
Guo, Jing, Lundstrom, Mark (2005) Role of phonon scattering in carbon nanotube field-effect transistors. Applied Physics Letters, 86 (19). 193103pp. doi:10.1063/1.1923183
Bala Kumar, S., Seol, Gyungseon, Guo, Jing (2012) Modeling of a vertical tunneling graphene heterojunction field-effect transistor. Applied Physics Letters, 101 (3). 33503pp. doi:10.1063/1.4737394
Guo, Jing, Lundstrom, Mark, Datta, Supriyo (2002) Performance projections for ballistic carbon nanotube field-effect transistors. Applied Physics Letters, 80 (17). 3192-3194 doi:10.1063/1.1474604
Chen, Wenchao, Guo, Jing (2011) Performance analysis of carbon nanotube contacted phase change memory by finite element method. Journal of Applied Physics, 110 (8). 84315pp. doi:10.1063/1.3655989
Chen, Xiangdong, Ouyang, Qiqing, Jayanarayanan, Sankaran Kartik, Prins, Freek E., Banerjee, Sanjay (2001) Vertical p-type high-mobility heterojunction metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 78 (21). 3334-3336 doi:10.1063/1.1375004
Sengupta, Amretashis, Mahapatra, Santanu (2013) Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors. Journal of Applied Physics, 113 (19). 194502pp. doi:10.1063/1.4805059
Fiori, G., Iannaccone, G. (2002) Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 81 (19). 3672-3674 doi:10.1063/1.1519349
 
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