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Tue, P. T., Miyasako, T., Tokumitsu, E., Shimoda, T. (2014) Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors. Journal of Applied Physics, 115 (10). 104501pp. doi:10.1063/1.4866597

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Reference TypeJournal (article/letter/editorial)
TitleKelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors
JournalJournal of Applied Physics
AuthorsTue, P. T.Author
Miyasako, T.Author
Tokumitsu, E.Author
Shimoda, T.Author
Year2014 (March 14)Volume115
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.4866597Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5196141Long-form Identifiermindat:1:5:5196141:5
GUID0
Full ReferenceTue, P. T., Miyasako, T., Tokumitsu, E., Shimoda, T. (2014) Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors. Journal of Applied Physics, 115 (10). 104501pp. doi:10.1063/1.4866597
Plain TextTue, P. T., Miyasako, T., Tokumitsu, E., Shimoda, T. (2014) Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors. Journal of Applied Physics, 115 (10). 104501pp. doi:10.1063/1.4866597
In(2014, March) Journal of Applied Physics Vol. 115 (10) AIP Publishing

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Miyasako, Takaaki, Senoo, Masaru, Tokumitsu, Eisuke (2005) Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability. Applied Physics Letters, 86 (16). 162902pp. doi:10.1063/1.1905800
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Thanh, Pham Van, Trinh, Bui Nguyen Quoc, Miyasako, Takaaki, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2012) Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)$_{4}$Ti$_{3}$O$_{12}$/Pb(Zr,Ti)O$_{3}$ Stacked Gate Insulator. Japanese Journal of Applied Physics, 51. 9 doi:10.1143/jjap.51.09la09
Mohit, , Miyasako, Takaaki, Tokumitsu, Eisuke (2021) Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process. Japanese Journal of Applied Physics, 60. doi:10.35848/1347-4065/abd6da
Thanh, Pham Van, Trinh, Bui Nguyen Quoc, Miyasako, Takaaki, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2012) Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3Stacked Gate Insulator. Japanese Journal of Applied Physics, 51 (9) 9 doi:10.7567/jjap.51.09la09
Puntambekar, Kanan P., Pesavento, Paul V., Frisbie, C. Daniel (2003) Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy. Applied Physics Letters, 83 (26). 5539-5541 doi:10.1063/1.1637443
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