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Nag Chowdhury, Basudev, Chattopadhyay, Sanatan (2014) Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors. Journal of Applied Physics, 115 (12). 124502pp. doi:10.1063/1.4869495

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Reference TypeJournal (article/letter/editorial)
TitleInvestigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors
JournalJournal of Applied Physics
AuthorsNag Chowdhury, BasudevAuthor
Chattopadhyay, SanatanAuthor
Year2014 (March 28)Volume115
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.4869495Search in ResearchGate
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Mindat Ref. ID5196332Long-form Identifiermindat:1:5:5196332:5
GUID0
Full ReferenceNag Chowdhury, Basudev, Chattopadhyay, Sanatan (2014) Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors. Journal of Applied Physics, 115 (12). 124502pp. doi:10.1063/1.4869495
Plain TextNag Chowdhury, Basudev, Chattopadhyay, Sanatan (2014) Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors. Journal of Applied Physics, 115 (12). 124502pp. doi:10.1063/1.4869495
In(2014, March) Journal of Applied Physics Vol. 115 (12) AIP Publishing

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