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Das, Avishek, Palit, Mainak, Paul, Somdatta, Chowdhury, Basudev Nag, Dutta, Himadri Sekhar, Karmakar, Anupam, Chattopadhyay, Sanatan (2014) Investigation of the electrical switching and rectification characteristics of a single standalone n-type ZnO-nanowire/p-Si junction diode. Applied Physics Letters, 105 (8). 83106pp. doi:10.1063/1.4893944

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of the electrical switching and rectification characteristics of a single standalone n-type ZnO-nanowire/p-Si junction diode
JournalApplied Physics Letters
AuthorsDas, AvishekAuthor
Palit, MainakAuthor
Paul, SomdattaAuthor
Chowdhury, Basudev NagAuthor
Dutta, Himadri SekharAuthor
Karmakar, AnupamAuthor
Chattopadhyay, SanatanAuthor
Year2014 (August 25)Volume105
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.4893944Search in ResearchGate
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Mindat Ref. ID8631470Long-form Identifiermindat:1:5:8631470:7
GUID0
Full ReferenceDas, Avishek, Palit, Mainak, Paul, Somdatta, Chowdhury, Basudev Nag, Dutta, Himadri Sekhar, Karmakar, Anupam, Chattopadhyay, Sanatan (2014) Investigation of the electrical switching and rectification characteristics of a single standalone n-type ZnO-nanowire/p-Si junction diode. Applied Physics Letters, 105 (8). 83106pp. doi:10.1063/1.4893944
Plain TextDas, Avishek, Palit, Mainak, Paul, Somdatta, Chowdhury, Basudev Nag, Dutta, Himadri Sekhar, Karmakar, Anupam, Chattopadhyay, Sanatan (2014) Investigation of the electrical switching and rectification characteristics of a single standalone n-type ZnO-nanowire/p-Si junction diode. Applied Physics Letters, 105 (8). 83106pp. doi:10.1063/1.4893944
In(2014, August) Applied Physics Letters Vol. 105 (8) AIP Publishing

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