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Eckes, M. W., Friend, B. E., Stollenwerk, A. J. (2014) Effect of growth temperature on ballistic electron transport through the Au/Si(001) interface. Journal of Applied Physics, 115 (16). 163710pp. doi:10.1063/1.4873172

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Reference TypeJournal (article/letter/editorial)
TitleEffect of growth temperature on ballistic electron transport through the Au/Si(001) interface
JournalJournal of Applied Physics
AuthorsEckes, M. W.Author
Friend, B. E.Author
Stollenwerk, A. J.Author
Year2014 (April 28)Volume115
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.4873172Search in ResearchGate
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Mindat Ref. ID5196661Long-form Identifiermindat:1:5:5196661:4
GUID0
Full ReferenceEckes, M. W., Friend, B. E., Stollenwerk, A. J. (2014) Effect of growth temperature on ballistic electron transport through the Au/Si(001) interface. Journal of Applied Physics, 115 (16). 163710pp. doi:10.1063/1.4873172
Plain TextEckes, M. W., Friend, B. E., Stollenwerk, A. J. (2014) Effect of growth temperature on ballistic electron transport through the Au/Si(001) interface. Journal of Applied Physics, 115 (16). 163710pp. doi:10.1063/1.4873172
In(2014, April) Journal of Applied Physics Vol. 115 (16) AIP Publishing

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Stollenwerk, A. J., Krause, M. R., Garramone, J. J., Spadafora, E. J., LaBella, V. P. (2007) Measuring spin dependent hot electron transport through a metal-semiconductor interface using spin-polarized ballistic electron emission microscopy. Physical Review B, 76 (19) doi:10.1103/physrevb.76.195311
Ostheim, L., Klar, P. J., Moryson, Y., Rohnke, M., Beyer, A., Volk, M., Munde, M., Stolz, W., Volz, K. (2019) Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures. Journal of Applied Physics, 126 (21). 215704pp. doi:10.1063/1.5124049
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Mikhailov, G. M., Chernykh, A. V., Malikov, I. V., Fomin, L. A. (2022) Multiterminal epitaxial tungsten nanostructures on MgO/GaAs(001) substrates: Temperature effects in ballistic electron transport. Journal of Applied Physics, 132 (16) 164304 doi:10.1063/5.0103350
Weilmeier, M. K., Rippard, W. H., Buhrman, R. A. (1999) Ballistic electron transport through Au(111)/Si(111) and Au(111)/Si(100) interfaces. Physical Review B, 59 (4) doi:10.1103/physrevb.59.r2521
Sumiya, Touru, Honda, Katsuya, Miura, Tadao, Tanaka, Shun-ichiro (1999) Hot-electron transport through Au/CaF2/Si(111) structure studied by ballistic electron emission spectroscopy. Journal of Applied Physics, 85 (2). 941-946 doi:10.1063/1.369214
Durcan, Chris A., Balsano, Robert, LaBella, Vincent P. (2015) Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy. Journal of Applied Physics, 117 (24). 245306pp. doi:10.1063/1.4922972
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Baribeau, J.‐M., Lockwood, D. J., Syme, R. W. G. (1996) Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation. Journal of Applied Physics, 80 (3). 1450-1459 doi:10.1063/1.363013
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