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Zhou, P. Y., Dou, X. M., Wu, X. F., Ding, K., Luo, S., Yang, T., Zhu, H. J., Jiang, D. S., Sun, B. Q. (2014) Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure. Journal of Applied Physics, 116 (2). 23510pp. doi:10.1063/1.4890013

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure
JournalJournal of Applied Physics
AuthorsZhou, P. Y.Author
Dou, X. M.Author
Wu, X. F.Author
Ding, K.Author
Luo, S.Author
Yang, T.Author
Zhu, H. J.Author
Jiang, D. S.Author
Sun, B. Q.Author
Year2014 (July 14)Volume116
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4890013Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5199523Long-form Identifiermindat:1:5:5199523:6
GUID0
Full ReferenceZhou, P. Y., Dou, X. M., Wu, X. F., Ding, K., Luo, S., Yang, T., Zhu, H. J., Jiang, D. S., Sun, B. Q. (2014) Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure. Journal of Applied Physics, 116 (2). 23510pp. doi:10.1063/1.4890013
Plain TextZhou, P. Y., Dou, X. M., Wu, X. F., Ding, K., Luo, S., Yang, T., Zhu, H. J., Jiang, D. S., Sun, B. Q. (2014) Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure. Journal of Applied Physics, 116 (2). 23510pp. doi:10.1063/1.4890013
In(2014, July) Journal of Applied Physics Vol. 116 (2) AIP Publishing

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Zhou, P. Y., Wu, X. F., Ding, K., Dou, X. M., Zha, G. W., Ni, H. Q., Niu, Z. C., Zhu, H. J., Jiang, D. S., Zhao, C. L., Sun, B. Q. (2015) Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure. Journal of Applied Physics, 117 (1). 14304pp. doi:10.1063/1.4905246
Zhou, P. Y., Dou, X. M., Wu, X. F., Ding, K., Li, M. F., Ni, H. Q., Niu, Z. C., Jiang, D. S., Sun, B. Q. (2015) Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes. Scientific Reports, 4. doi:10.1038/srep03633
Wang, H. Y., Dou, X. M., Yang, Sh., Su, D., Jiang, D. S., Ni, H. Q., Niu, Z. C., Sun, B. Q. (2014) Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films. Journal of Applied Physics, 115 (12). 123104pp. doi:10.1063/1.4869739
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Li, Z. C., Liu, J. P., Feng, M. X., Zhou, K., Zhang, S. M., Wang, H., Li, D. Y., Zhang, L. Q., Sun, Q., Jiang, D. S., Wang, H. B., Yang, H. (2013) Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots. Journal of Applied Physics, 114 (9). 93105pp. doi:10.1063/1.4820935
Chang, X. Y., Dou, X. M., Sun, B. Q., Xiong, Y. H., Niu, Z. C., Ni, H. Q., Jiang, D. S. (2009) Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots. Journal of Applied Physics, 106 (10). 103716pp. doi:10.1063/1.3262607
Sun, B. Q., Lu, Z. D., Jiang, D. S., Wu, J. Q., Xu, Z. Y., Wang, Y. Q., Wang, J. N., Ge, W. K. (1998) Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots. Applied Physics Letters, 73 (18). 2657-2659 doi:10.1063/1.122544
Dou, X. M., Chang, X. Y., Sun, B. Q., Xiong, Y. H., Niu, Z. C., Ni, H. Q., Jiang, D. S. (2009) Electron spin relaxation by nuclei and holes in single InAs quantum dots. Applied Physics Letters, 95 (22). 221903pp. doi:10.1063/1.3270527
Anantathanasarn, S., Nötzel, R., van Veldhoven, P. J., Eijkemans, T. J., Wolter, J. H. (2005) Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics, 98 (1). 13503pp. doi:10.1063/1.1938271
Ma, B. S., Wang, X. D., Su, F. H., Fang, Z. L., Ding, K., Niu, Z. C., Li, G. H. (2004) Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure. Journal of Applied Physics, 95 (3). 933-938 doi:10.1063/1.1635988
Zhou, D., Anantathanasarn, S., van Veldhoven, P. J., van Otten, F. W. M., Eijkemans, T. J., de Vries, T., Smalbrugge, E., Nötzel, R. (2006) Lateral wavelength control of InAs∕InGaAsP∕InP (100) quantum dots in the 1.55 μm region by selective-area metal organic vapor-phase epitaxy. Journal of Applied Physics, 100 (11). 113512pp. doi:10.1063/1.2398796
 
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