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Bonilla, Ruy S., Woodcock, Frederick, Wilshaw, Peter R. (2014) Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation. Journal of Applied Physics, 116 (5). 54102pp. doi:10.1063/1.4892099

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Reference TypeJournal (article/letter/editorial)
TitleVery low surface recombination velocity in n-type c-Si using extrinsic field effect passivation
JournalJournal of Applied Physics
AuthorsBonilla, Ruy S.Author
Woodcock, FrederickAuthor
Wilshaw, Peter R.Author
Year2014 (August 7)Volume116
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.4892099Search in ResearchGate
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Mindat Ref. ID5200100Long-form Identifiermindat:1:5:5200100:2
GUID0
Full ReferenceBonilla, Ruy S., Woodcock, Frederick, Wilshaw, Peter R. (2014) Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation. Journal of Applied Physics, 116 (5). 54102pp. doi:10.1063/1.4892099
Plain TextBonilla, Ruy S., Woodcock, Frederick, Wilshaw, Peter R. (2014) Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation. Journal of Applied Physics, 116 (5). 54102pp. doi:10.1063/1.4892099
In(2014, August) Journal of Applied Physics Vol. 116 (5) AIP Publishing

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Bonilla, Ruy S., Wilshaw, Peter R. (2014) A technique for field effect surface passivation for silicon solar cells. Applied Physics Letters, 104 (23). 232903pp. doi:10.1063/1.4882161
Bonilla, Ruy S., Wilshaw, Peter R. (2017) On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements. Journal of Applied Physics, 121 (13). 135301pp. doi:10.1063/1.4979722
Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Hamer, Phillip, Wilshaw, Peter R. (2017) Long term stability of c-Si surface passivation using corona charged SiO 2. Applied Surface Science, 412. 657-667 doi:10.1016/j.apsusc.2017.03.204
Bonilla, Ruy S, Wilshaw, Peter R (2018) Potassium ions in SiO2: electrets for silicon surface passivation. Journal of Physics D: Applied Physics, 51. 25101pp. doi:10.1088/1361-6463/aa9b1b
Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Wilshaw, Peter R. (2014) On the location and stability of charge in SiO2/SiNxdielectric double layers used for silicon surface passivation. Journal of Applied Physics, 115 (14). 144105pp. doi:10.1063/1.4871075
Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Wilshaw, Peter R. (2015) Erratum: “On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation” [J. Appl. Phys. 115, 144105 (2014)]. Journal of Applied Physics, 117 (12). 129901pp. doi:10.1063/1.4915629
Bonilla, Ruy S., Hoex, Bram, Hamer, Phillip, Wilshaw, Peter R. (2017) Dielectric surface passivation for silicon solar cells: A review. physica status solidi (a), 214 (7). 1700293pp. doi:10.1002/pssa.201700293
Bourret‐Sicotte, Gabrielle, Hamer, Phillip, Bonilla, Ruy. S., Collett, Katherine, Ciesla, Alison, Colwell, Jack, Wilshaw, Peter R (2017) Shielded hydrogen passivation − A potential in‐line passivation process. physica status solidi (a), 214 (7). 1700383pp. doi:10.1002/pssa.201700383
Shaw, Eleanor C., Hamer, Phillip, Collett, Katherine A., Bourrett‐Sicotte, Gabrielle, Bonilla, Ruy S., Wilshaw, Peter R. (2017) Saw Damage Gettering for industrially relevant mc‐Si feedstock. physica status solidi (a), 214 (7). 1700373pp. doi:10.1002/pssa.201700373
Zhou, Ruinan, Yu, Mingzhe, Tweddle, David, Hamer, Phillip, Chen, Daniel, Hallam, Brett, Ciesla, Alison, Altermatt, Pietro P., Wilshaw, Peter R., Bonilla, Ruy S. (2020) Understanding and optimizing EBIC pn-junction characterization from modeling insights. Journal of Applied Physics, 127 (2). 24502pp. doi:10.1063/1.5139894
Saint-Cast, Pierre, Kania, Daniel, Hofmann, Marc, Benick, Jan, Rentsch, Jochen, Preu, Ralf (2009) Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide. Applied Physics Letters, 95 (15). 151502pp. doi:10.1063/1.3250157
 
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