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Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Wilshaw, Peter R. (2015) Erratum: “On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation” [J. Appl. Phys. 115, 144105 (2014)]. Journal of Applied Physics, 117 (12). 129901pp. doi:10.1063/1.4915629

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation” [J. Appl. Phys. 115, 144105 (2014)]
JournalJournal of Applied Physics
AuthorsBonilla, Ruy S.Author
Reichel, ChristianAuthor
Hermle, MartinAuthor
Wilshaw, Peter R.Author
Year2015 (March 28)Volume117
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.4915629Search in ResearchGate
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Mindat Ref. ID5200697Long-form Identifiermindat:1:5:5200697:3
GUID0
Full ReferenceBonilla, Ruy S., Reichel, Christian, Hermle, Martin, Wilshaw, Peter R. (2015) Erratum: “On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation” [J. Appl. Phys. 115, 144105 (2014)]. Journal of Applied Physics, 117 (12). 129901pp. doi:10.1063/1.4915629
Plain TextBonilla, Ruy S., Reichel, Christian, Hermle, Martin, Wilshaw, Peter R. (2015) Erratum: “On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation” [J. Appl. Phys. 115, 144105 (2014)]. Journal of Applied Physics, 117 (12). 129901pp. doi:10.1063/1.4915629
In(2015, March) Journal of Applied Physics Vol. 117 (12) AIP Publishing

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Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Wilshaw, Peter R. (2014) On the location and stability of charge in SiO2/SiNxdielectric double layers used for silicon surface passivation. Journal of Applied Physics, 115 (14). 144105pp. doi:10.1063/1.4871075
Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Hamer, Phillip, Wilshaw, Peter R. (2017) Long term stability of c-Si surface passivation using corona charged SiO 2. Applied Surface Science, 412. 657-667 doi:10.1016/j.apsusc.2017.03.204
Bonilla, Ruy S, Wilshaw, Peter R (2018) Potassium ions in SiO2: electrets for silicon surface passivation. Journal of Physics D: Applied Physics, 51. 25101pp. doi:10.1088/1361-6463/aa9b1b
Bonilla, Ruy S., Wilshaw, Peter R. (2014) A technique for field effect surface passivation for silicon solar cells. Applied Physics Letters, 104 (23). 232903pp. doi:10.1063/1.4882161
Bonilla, Ruy S., Woodcock, Frederick, Wilshaw, Peter R. (2014) Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation. Journal of Applied Physics, 116 (5). 54102pp. doi:10.1063/1.4892099
Bonilla, Ruy S., Hoex, Bram, Hamer, Phillip, Wilshaw, Peter R. (2017) Dielectric surface passivation for silicon solar cells: A review. physica status solidi (a), 214 (7). 1700293pp. doi:10.1002/pssa.201700293
Masuch, Paul, Reichel, Christian, Bonilla, Ruy Sebastian, Richter, Armin, Benick, Jan (2023) Bias-voltage photoconductance and photoluminescence for the determination of silicon-dielectric interface properties in SiO2/Al2O3 stacks. Journal of Applied Physics, 134 (7) doi:10.1063/5.0153204
Bonilla, Ruy S., Wilshaw, Peter R. (2017) On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements. Journal of Applied Physics, 121 (13). 135301pp. doi:10.1063/1.4979722
Fisher, W. M., Rand, S. C. (2011) Erratum: Optically-induced charge separation and terahertz emission in unbiased dielectrics [J. Appl. Phys. 109, 064903 (2011)]. Journal of Applied Physics, 109 (12). 129901pp. doi:10.1063/1.3595637
Thota, Subhash, Seehra, M. S. (2015) Erratum: “Co-existence of ferrimagnetism and spin-glass state in the spinel Co2SnO4” [J. Appl. Phys. 113, 203905 (2013)]. Journal of Applied Physics, 118 (12). 129901pp. doi:10.1063/1.4932158
Adkins, J. W., Fina, I., Sánchez, F., Bakaul, S. R., Abiade, J. T. (2022) Erratum: “Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2” [Appl. Phys. Lett. 117, 142902 (2020)]. Applied Physics Letters, 120 (12) 129901pp. doi:10.1063/5.0089344
 
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