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Horton, M. K., Rhode, S. L., Moram, M. A. (2014) Structure and electronic properties of mixed (a + c) dislocation cores in GaN. Journal of Applied Physics, 116 (6). 63710pp. doi:10.1063/1.4893030

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Reference TypeJournal (article/letter/editorial)
TitleStructure and electronic properties of mixed (a + c) dislocation cores in GaN
JournalJournal of Applied Physics
AuthorsHorton, M. K.Author
Rhode, S. L.Author
Moram, M. A.Author
Year2014 (August 14)Volume116
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4893030Search in ResearchGate
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Mindat Ref. ID5200220Long-form Identifiermindat:1:5:5200220:5
GUID0
Full ReferenceHorton, M. K., Rhode, S. L., Moram, M. A. (2014) Structure and electronic properties of mixed (a + c) dislocation cores in GaN. Journal of Applied Physics, 116 (6). 63710pp. doi:10.1063/1.4893030
Plain TextHorton, M. K., Rhode, S. L., Moram, M. A. (2014) Structure and electronic properties of mixed (a + c) dislocation cores in GaN. Journal of Applied Physics, 116 (6). 63710pp. doi:10.1063/1.4893030
In(2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing

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Rhode, S. L., Horton, M. K., Fu, W. Y., Sahonta, S.-L., Kappers, M. J., Pennycook, T. J., Humphreys, C. J., Dusane, R. O., Moram, M. A. (2015) Dislocation core structures in Si-doped GaN. Applied Physics Letters, 107 (24). 243104pp. doi:10.1063/1.4937457
Rhode, S. L., Horton, M. K., Sahonta, S.-L., Kappers, M. J., Haigh, S. J., Pennycook, T. J., McAleese, C., Humphreys, C. J., Dusane, R. O., Moram, M. A. (2016) Dislocation core structures in (0001) InGaN. Journal of Applied Physics, 119 (10). 105301pp. doi:10.1063/1.4942847
Rhode, S. K., Horton, M. K., Kappers, M. J., Zhang, S., Humphreys, C. J., Dusane, R. O., Sahonta, S. -L., Moram, M. A. (2013) Mg Doping Affects Dislocation Core Structures in GaN. Physical Review Letters, 111 (2). doi:10.1103/physrevlett.111.025502
Nellist, P D, Hirsch, P B, Rhode, S, Horton, M K, Lozano, J G, Yasuhara, A, Okunishi, E, Zhang, S, Sahonta, S-L, Kappers, M J, Humphreys, C J, Moram, M A (2014) A dissociation mechanism for the [a+c] dislocation in GaN. Journal of Physics: Conference Series, 522. 12037pp. doi:10.1088/1742-6596/522/1/012037
Rhode, S. L., Fu, W. Y., Moram, M. A., Massabuau, F. C.-P., Kappers, M. J., McAleese, C., Oehler, F., Humphreys, C. J., Dusane, R. O., Sahonta, S.–L. (2014) Structure and strain relaxation effects of defects in InxGa1−xN epilayers. Journal of Applied Physics, 116 (10). 103513pp. doi:10.1063/1.4894688
Knoll, S. M., Rhode, S. K., Zhang, S., Joyce, T. B., Moram, M. A. (2014) Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions. Applied Physics Letters, 104 (10). 101906pp. doi:10.1063/1.4868538
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