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García, I., Geisz, J. F., France, R. M., Kang, J., Wei, S.-H., Ochoa, M., Friedman, D. J. (2014) Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates. Journal of Applied Physics, 116 (7). 74508pp. doi:10.1063/1.4892773

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Reference TypeJournal (article/letter/editorial)
TitleMetamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates
JournalJournal of Applied Physics
AuthorsGarcía, I.Author
Geisz, J. F.Author
France, R. M.Author
Kang, J.Author
Wei, S.-H.Author
Ochoa, M.Author
Friedman, D. J.Author
Year2014 (August 21)Volume116
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.4892773Search in ResearchGate
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Mindat Ref. ID5200241Long-form Identifiermindat:1:5:5200241:8
GUID0
Full ReferenceGarcía, I., Geisz, J. F., France, R. M., Kang, J., Wei, S.-H., Ochoa, M., Friedman, D. J. (2014) Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates. Journal of Applied Physics, 116 (7). 74508pp. doi:10.1063/1.4892773
Plain TextGarcía, I., Geisz, J. F., France, R. M., Kang, J., Wei, S.-H., Ochoa, M., Friedman, D. J. (2014) Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates. Journal of Applied Physics, 116 (7). 74508pp. doi:10.1063/1.4892773
In(2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing

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