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Wang, Jiaxin, Wu, Chunlei, Huang, Qianqian, Wang, Chao, Huang, Ru (2014) A closed-form capacitance model for tunnel FETs with explicit surface potential solutions. Journal of Applied Physics, 116 (9). 94501pp. doi:10.1063/1.4894624

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Reference TypeJournal (article/letter/editorial)
TitleA closed-form capacitance model for tunnel FETs with explicit surface potential solutions
JournalJournal of Applied Physics
AuthorsWang, JiaxinAuthor
Wu, ChunleiAuthor
Huang, QianqianAuthor
Wang, ChaoAuthor
Huang, RuAuthor
Year2014 (September 7)Volume116
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.4894624Search in ResearchGate
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Mindat Ref. ID5200439Long-form Identifiermindat:1:5:5200439:1
GUID0
Full ReferenceWang, Jiaxin, Wu, Chunlei, Huang, Qianqian, Wang, Chao, Huang, Ru (2014) A closed-form capacitance model for tunnel FETs with explicit surface potential solutions. Journal of Applied Physics, 116 (9). 94501pp. doi:10.1063/1.4894624
Plain TextWang, Jiaxin, Wu, Chunlei, Huang, Qianqian, Wang, Chao, Huang, Ru (2014) A closed-form capacitance model for tunnel FETs with explicit surface potential solutions. Journal of Applied Physics, 116 (9). 94501pp. doi:10.1063/1.4894624
In(2014, September) Journal of Applied Physics Vol. 116 (9) AIP Publishing

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