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Suzuki, Daisuke, Hanyu, Takahiro (2015) Magnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver. Journal of Applied Physics, 117 (17). 17pp. doi:10.1063/1.4906760

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Reference TypeJournal (article/letter/editorial)
TitleMagnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver
JournalJournal of Applied Physics
AuthorsSuzuki, DaisukeAuthor
Hanyu, TakahiroAuthor
Year2015 (May 7)Volume117
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.4906760Search in ResearchGate
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Mindat Ref. ID5201036Long-form Identifiermindat:1:5:5201036:5
GUID0
Full ReferenceSuzuki, Daisuke, Hanyu, Takahiro (2015) Magnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver. Journal of Applied Physics, 117 (17). 17pp. doi:10.1063/1.4906760
Plain TextSuzuki, Daisuke, Hanyu, Takahiro (2015) Magnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver. Journal of Applied Physics, 117 (17). 17pp. doi:10.1063/1.4906760
In(2015, May) Journal of Applied Physics Vol. 117 (17) AIP Publishing

See Also

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Suzuki, Daisuke, Hanyu, Takahiro (2017) Design of a low-power nonvolatile flip-flop using three-terminal magnetic-tunnel-junction-based self-terminated mechanism. Japanese Journal of Applied Physics, 56 (4) 4 doi:10.7567/jjap.56.04cn06
Onizawa, Naoya, Hanyu, Takahiro (2017) Soft/write-error-resilient CMOS/magnetic tunnel junction nonvolatile flip-flop based on majority-decision shared writing. Japanese Journal of Applied Physics, 56 (4) 4 doi:10.7567/jjap.56.04cf12
Suzuki, Daisuke, Hanyu, Takahiro (2023) Design of an energy-efficient nonvolatile lookup table circuit using active-load-localized circuitry with self-terminated writing/reading. Japanese Journal of Applied Physics, 62. doi:10.35848/1347-4065/acbd5a
Suzuki, Daisuke, Hanyu, Takahiro (2018) Design of a magnetic-tunnel-junction-oriented nonvolatile lookup table circuit with write-operation-minimized data shifting. Japanese Journal of Applied Physics, 57 (4) 4 doi:10.7567/jjap.57.04fe09
Suzuki, Daisuke, Hanyu, Takahiro (2024) Design of a spin–orbit-torque-based self-terminated nonvolatile register for a write/leakage-energy-minimized backup operation. Japanese Journal of Applied Physics, 63 (4) 4 doi:10.35848/1347-4065/ad2a9c
Suzuki, Daisuke, Oka, Takahiro, Hanyu, Takahiro (2021) Design of an energy-efficient binarized convolutional neural network accelerator using a nonvolatile field-programmable gate array with only-once-write shifting. Japanese Journal of Applied Physics, 60. doi:10.35848/1347-4065/abe682
Suzuki, Daisuke, Hanyu, Takahiro (2015) Nonvolatile field-programmable gate array using 2-transistor–1-MTJ-cell-based multi-context array for power and area efficient dynamically reconfigurable logic. Japanese Journal of Applied Physics, 54 (4) 4 doi:10.7567/jjap.54.04de01
Natsui, Masanori, Yamagishi, Gensei, Hanyu, Takahiro (2021) Design of a highly reliable nonvolatile flip-flop incorporating a common-mode write error detection capability. Japanese Journal of Applied Physics, 60. doi:10.35848/1347-4065/abdcb0
Suzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04dm02
Suzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro (2012) Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04dm02
Suzuki, D., Natsui, M., Mochizuki, A., Miura, S., Honjo, H., Kinoshita, K., Fukami, S., Sato, H., Ikeda, S., Endoh, T., Ohno, H., Hanyu, T. (2014) Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure. Journal of Applied Physics, 115 (17). 17pp. doi:10.1063/1.4868332
 
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