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Rozhavskaya, M. M., Lundin, W. V., Lundina, E. Yu., Davydov, V. Yu., Troshkov, S. I., Vasilyev, A. A., Brunkov, P. N., Baklanov, A. V., Tsatsulnikov, A. F., Dubrovskii, V. G. (2015) Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film. Journal of Applied Physics, 117 (2). 24301pp. doi:10.1063/1.4905427

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Reference TypeJournal (article/letter/editorial)
TitleGallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film
JournalJournal of Applied Physics
AuthorsRozhavskaya, M. M.Author
Lundin, W. V.Author
Lundina, E. Yu.Author
Davydov, V. Yu.Author
Troshkov, S. I.Author
Vasilyev, A. A.Author
Brunkov, P. N.Author
Baklanov, A. V.Author
Tsatsulnikov, A. F.Author
Dubrovskii, V. G.Author
Year2015 (January 14)Volume117
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4905427Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5201740Long-form Identifiermindat:1:5:5201740:1
GUID0
Full ReferenceRozhavskaya, M. M., Lundin, W. V., Lundina, E. Yu., Davydov, V. Yu., Troshkov, S. I., Vasilyev, A. A., Brunkov, P. N., Baklanov, A. V., Tsatsulnikov, A. F., Dubrovskii, V. G. (2015) Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film. Journal of Applied Physics, 117 (2). 24301pp. doi:10.1063/1.4905427
Plain TextRozhavskaya, M. M., Lundin, W. V., Lundina, E. Yu., Davydov, V. Yu., Troshkov, S. I., Vasilyev, A. A., Brunkov, P. N., Baklanov, A. V., Tsatsulnikov, A. F., Dubrovskii, V. G. (2015) Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film. Journal of Applied Physics, 117 (2). 24301pp. doi:10.1063/1.4905427
In(2015, January) Journal of Applied Physics Vol. 117 (2) AIP Publishing

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Lundin, W. V., Zavarin, E. E., Rozhavskaya, M. M., Nikolaev, A. E., Sakharov, V., Troshkov, S. I., Sinitsyn, M. A., Davydov, D. V., Kulagina, M. M., Brunkov, P. N., Tsatsulnikov, A. F. (2012) Double-cross epitaxial overgrowth of nonpolar gallium nitride layers. Technical Physics Letters, 38. 265-267 doi:10.1134/s1063785012030285
Rozhavskaya, M. M., Lundin, W. V., Lundina, E. Yu., Sakharov, A. V., Troshkov, S. I., Smirnov, A. N., Davydov, V. Yu. (2014) Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer. Technical Physics Letters, 40. 372-374 doi:10.1134/s1063785014050125
Rozhavskaya, M M, Troshkov, S I, Lundina, E Yu, Smirnov, A N, Davydov, V Yu, Lundin, W V (2014) GaN nanowires growth with record growth rate using Ti thin film. Journal of Physics: Conference Series, 572. 12030pp. doi:10.1088/1742-6596/572/1/012030
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Lundin, W. V., Zavarin, E. E., Popov, M. G., Troshkov, S. I., Sakharov, A. V., Smirnova, I. P., Kulagina, M. M., Davydov, V. Yu., Smirnov, A. N., Tsatsulnikov, A. F. (2015) The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy. Technical Physics Letters, 41. 1006-1009 doi:10.1134/s1063785015100247
Lundin, W. V., Zavarin, E. E., Rozhavskaya, M. M., Troshkov, S. I., Tsatsulnikov, A. F. (2011) Specific features of gallium nitride selective epitaxy in round windows. Technical Physics Letters, 37. 735-738 doi:10.1134/s1063785011080104
Rozhavskaya, M. M., Lundin, W. V., Troshkov, S. I., Tsatsulnikov, A. F., Dubrovskii, V. G. (2015) Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling. physica status solidi (a), 212 (4). 851-854 doi:10.1002/pssa.201431912
Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Zakgeim, D. A., Lundina, E. Yu., Brunkov, P. N., Tsatsulnikov, A. F. (2019) Insulating GaN Epilayers Co-Doped with Iron and Carbon. Technical Physics Letters, 45. 723-726 doi:10.1134/s106378501907023x
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