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Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Nikolaev, A. E., Lundina, E. Yu., Sakharov, A. V., Troshkov, S. I., Tsatsul’nikov, A. F. (2008) InGaAlN heterostructures for LEDs grown on patterned sapphire substrates. Technical Physics Letters, 34. 924-926 doi:10.1134/s1063785008110072

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Reference TypeJournal (article/letter/editorial)
TitleInGaAlN heterostructures for LEDs grown on patterned sapphire substrates
JournalTechnical Physics Letters
AuthorsLundin, W. V.Author
Zavarin, E. E.Author
Sinitsyn, M. A.Author
Nikolaev, A. E.Author
Lundina, E. Yu.Author
Sakharov, A. V.Author
Troshkov, S. I.Author
Tsatsul’nikov, A. F.Author
Year2008 (November)Volume34
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785008110072Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6206548Long-form Identifiermindat:1:5:6206548:9
GUID0
Full ReferenceLundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Nikolaev, A. E., Lundina, E. Yu., Sakharov, A. V., Troshkov, S. I., Tsatsul’nikov, A. F. (2008) InGaAlN heterostructures for LEDs grown on patterned sapphire substrates. Technical Physics Letters, 34. 924-926 doi:10.1134/s1063785008110072
Plain TextLundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Nikolaev, A. E., Lundina, E. Yu., Sakharov, A. V., Troshkov, S. I., Tsatsul’nikov, A. F. (2008) InGaAlN heterostructures for LEDs grown on patterned sapphire substrates. Technical Physics Letters, 34. 924-926 doi:10.1134/s1063785008110072
In(n.d.) Technical Physics Letters Vol. 34. Pleiades Publishing Ltd

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Lundin, W. V., Zavarin, E. E., Rozhavskaya, M. M., Nikolaev, A. E., Sakharov, V., Troshkov, S. I., Sinitsyn, M. A., Davydov, D. V., Kulagina, M. M., Brunkov, P. N., Tsatsulnikov, A. F. (2012) Double-cross epitaxial overgrowth of nonpolar gallium nitride layers. Technical Physics Letters, 38. 265-267 doi:10.1134/s1063785012030285
Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Yagovkina, M. A., Tsatsul’nikov, A. F. (2008) Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen. Technical Physics Letters, 34. 908-911 doi:10.1134/s1063785008110023
Sakharov, A.V., Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A., Nikolaev, A.E., Lundina, E.Yu., Tsatsulnikov, A.F. (2008) Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs. Journal of Crystal Growth, 310 (23). 5151-5153 doi:10.1016/j.jcrysgro.2008.07.055
Rozhavskaya, M. M., Lundin, W. V., Lundina, E. Yu., Sakharov, A. V., Troshkov, S. I., Smirnov, A. N., Davydov, V. Yu. (2014) Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer. Technical Physics Letters, 40. 372-374 doi:10.1134/s1063785014050125
Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Zakgeim, D. A., Lundina, E. Yu., Brunkov, P. N., Tsatsulnikov, A. F. (2019) Insulating GaN Epilayers Co-Doped with Iron and Carbon. Technical Physics Letters, 45. 723-726 doi:10.1134/s106378501907023x
Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Sizov, V. S., Zakgeim, A. L., Chernyakov, A. E., Tsatsul’nikov, A. F. (2010) High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range. Technical Physics Letters, 36. 1066-1068 doi:10.1134/s1063785010110283
Lundin, W. V., Zavarin, E. E., Brunkov, P. N., Yagovkina, M. A., Troshkov, S. I., Sakharov, A. V., Nikolaev, A. E., Tsatsulnikov, A. F. (2016) The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy. Technical Physics Letters, 42. 431-434 doi:10.1134/s1063785016040192
Lundin, V. V., Sakharov, A. V., Zavarin, E. E., Zakgeim, D. A., Nikolaev, A. E., Brunkov, P. N., Yagovkina, M. A., Tsatsul’nikov, A. F. (2018) The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas. Technical Physics Letters, 44. 577-580 doi:10.1134/s1063785018070106
Lundin, W. V., Zavarin, E. E., Popov, M. G., Troshkov, S. I., Sakharov, A. V., Smirnova, I. P., Kulagina, M. M., Davydov, V. Yu., Smirnov, A. N., Tsatsulnikov, A. F. (2015) The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy. Technical Physics Letters, 41. 1006-1009 doi:10.1134/s1063785015100247
Cherkashin, N. A., Sakharov, A. V., Nikolaev, A. E., Lundin, V. V., Usov, S. O., Ustinov, V. M., Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V., Tsatsul’nikov, A. F. (2021) Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates. Technical Physics Letters, 47 (10) 753-756 doi:10.1134/s106378502108006x
Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Brunkov, P. N., Zavarin, E. E., Tsatsulnikov, A. F. (2010) High growth rate of AlN in a planetary MOVPE reactor. Technical Physics Letters, 36. 1133-1135 doi:10.1134/s1063785010120205
 
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