Vote for your favorite mineral in #MinCup25! - Dioptase vs. Wavellite
It's a green, green world for kiwi #wavellite vs desert emerald #dioptase.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Yagovkina, M. A., Tsatsul’nikov, A. F. (2008) Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen. Technical Physics Letters, 34. 908-911 doi:10.1134/s1063785008110023

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleVapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
JournalTechnical Physics Letters
AuthorsLundin, W. V.Author
Zavarin, E. E.Author
Sinitsyn, M. A.Author
Yagovkina, M. A.Author
Tsatsul’nikov, A. F.Author
Year2008 (November)Volume34
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785008110023Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6206543Long-form Identifiermindat:1:5:6206543:4
GUID0
Full ReferenceLundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Yagovkina, M. A., Tsatsul’nikov, A. F. (2008) Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen. Technical Physics Letters, 34. 908-911 doi:10.1134/s1063785008110023
Plain TextLundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Yagovkina, M. A., Tsatsul’nikov, A. F. (2008) Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen. Technical Physics Letters, 34. 908-911 doi:10.1134/s1063785008110023
In(n.d.) Technical Physics Letters Vol. 34. Pleiades Publishing Ltd

See Also

These are possibly similar items as determined by title/reference text matching only.

Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Nikolaev, A. E., Lundina, E. Yu., Sakharov, A. V., Troshkov, S. I., Tsatsul’nikov, A. F. (2008) InGaAlN heterostructures for LEDs grown on patterned sapphire substrates. Technical Physics Letters, 34. 924-926 doi:10.1134/s1063785008110072
Lundin, W. V., Zavarin, E. E., Brunkov, P. N., Yagovkina, M. A., Sakharov, A. V., Sinitsyn, M. A., Ber, B. Ya., Kazantsev, D. Yu., Tsatsulnikov, A. F. (2016) Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source. Technical Physics Letters, 42. 539-542 doi:10.1134/s106378501605028x
Lundin, W. V., Zavarin, E. E., Brunkov, P. N., Yagovkina, M. A., Troshkov, S. I., Sakharov, A. V., Nikolaev, A. E., Tsatsulnikov, A. F. (2016) The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy. Technical Physics Letters, 42. 431-434 doi:10.1134/s1063785016040192
Lundin, W. V., Zavarin, E. E., Rozhavskaya, M. M., Troshkov, S. I., Tsatsulnikov, A. F. (2011) Specific features of gallium nitride selective epitaxy in round windows. Technical Physics Letters, 37. 735-738 doi:10.1134/s1063785011080104
Bol’shakov, A. S., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsul’nikov, A. F., Yagovkina, M. A. (2013) Resonance Bragg structure with double InGaN quantum wells. Physics of the Solid State, 55. 1817-1820 doi:10.1134/s1063783413090059
Lundin, W. V., Zavarin, E. E., Rozhavskaya, M. M., Nikolaev, A. E., Sakharov, V., Troshkov, S. I., Sinitsyn, M. A., Davydov, D. V., Kulagina, M. M., Brunkov, P. N., Tsatsulnikov, A. F. (2012) Double-cross epitaxial overgrowth of nonpolar gallium nitride layers. Technical Physics Letters, 38. 265-267 doi:10.1134/s1063785012030285
Lundin, W. V., Zavarin, E. E., Popov, M. G., Troshkov, S. I., Sakharov, A. V., Smirnova, I. P., Kulagina, M. M., Davydov, V. Yu., Smirnov, A. N., Tsatsulnikov, A. F. (2015) The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy. Technical Physics Letters, 41. 1006-1009 doi:10.1134/s1063785015100247
Lundin, V. V., Sakharov, A. V., Zavarin, E. E., Zakgeim, D. A., Nikolaev, A. E., Brunkov, P. N., Yagovkina, M. A., Tsatsul’nikov, A. F. (2018) The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas. Technical Physics Letters, 44. 577-580 doi:10.1134/s1063785018070106
Kukushkin, S. A., Osipov, A. V., Zhukov, S. G., Zavarin, E. E., Lundin, W. V., Sinitsyn, M. A., Rozhavskaya, M. M., Tsatsulnikov, A. F., Troshkov, S. I., Feoktistov, N. A. (2012) Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide. Technical Physics Letters, 38. 297-299 doi:10.1134/s1063785012030261
Chaldyshev, V. V., Bolshakov, A. S., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F., Yagovkina, M. A., Kim, Taek, Park, Youngsoo (2011) Optical lattices of InGaN quantum well excitons. Applied Physics Letters, 99 (25). 251103pp. doi:10.1063/1.3670499
Lundin, W. V. (2005) Influence of the Carrier Gas Composition on Metalorganic Vapor Phase Epitaxy of Gallium Nitride. Technical Physics Letters, 31. 293pp. doi:10.1134/1.1920375
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 10, 2025 13:05:32
Go to top of page