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Vexler, M. I. (2017) Enhancement of minority carrier supply in a resonant-tunneling metal-insulator-silicon capacitor. Journal of Applied Physics, 121 (15). 155702pp. doi:10.1063/1.4981879

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement of minority carrier supply in a resonant-tunneling metal-insulator-silicon capacitor
JournalJournal of Applied Physics
AuthorsVexler, M. I.Author
Year2017 (April 21)Volume121
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.4981879Search in ResearchGate
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Mindat Ref. ID5206571Long-form Identifiermindat:1:5:5206571:8
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Full ReferenceVexler, M. I. (2017) Enhancement of minority carrier supply in a resonant-tunneling metal-insulator-silicon capacitor. Journal of Applied Physics, 121 (15). 155702pp. doi:10.1063/1.4981879
Plain TextVexler, M. I. (2017) Enhancement of minority carrier supply in a resonant-tunneling metal-insulator-silicon capacitor. Journal of Applied Physics, 121 (15). 155702pp. doi:10.1063/1.4981879
In(2017, April) Journal of Applied Physics Vol. 121 (15) AIP Publishing

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Vexler, M. I., Grekhov, I. V., Lutsev, L. V. (2013) Metal-insulator-semiconductor tunnel emitter transistor as a spintronic device: a concept. Journal of Applied Physics, 113 (4). 44518pp. doi:10.1063/1.4789386
El Hdiy, A., Khlil, R., Jin, Y., Tyaginov, S. E., Shulekin, A. F., Vexler, M. I. (2005) An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress. Journal of Applied Physics, 98 (2). 24501pp. doi:10.1063/1.1958167
Maraghechi, P., Foroughi-Abari, A., Cadien, K., Elezzabi, A. Y. (2012) Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices. Applied Physics Letters, 100 (11). 113503pp. doi:10.1063/1.3694024
Savin, H., Yli-Koski, M., Haarahiltunen, A. (2009) Role of copper in light induced minority-carrier lifetime degradation of silicon. Applied Physics Letters, 95 (15). 152111pp. doi:10.1063/1.3250161
Clark, K. P., Kirk, W. P., Seabaugh, A. C., Kao, Y. C. (1996) Minority carrier magneto‐oscillations in the bipolar quantum well resonant tunneling transistor. Journal of Applied Physics, 79 (5). 2732-2737 doi:10.1063/1.361146
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Ralph, J. F., Hall, S., Dhanak, V. R., Luo, Z., Beeby, S. (2018) Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Applied Physics Letters, 112 (1). 12902pp. doi:10.1063/1.4999258
Yang, Ming-Han, Hwu, Jenn-Gwo (2017) Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism. Journal of Applied Physics, 121 (15). 154504pp. doi:10.1063/1.4981891
McHugo, Scott A., Thompson, A. C., Périchaud, I., Martinuzzi, S. (1998) Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon. Applied Physics Letters, 72 (26). 3482-3484 doi:10.1063/1.121673
Emtage, P. R. (1967) Enhancement of Metal to Insulator Tunneling by Optical Phonons. Journal of Applied Physics, 38 (4). 1820-1825 doi:10.1063/1.1709766
Vexler, M. I., Kareva, G. G., Illarionov, Yu. Yu., Grekhov, I. V. (2016) Resonant electron tunneling and related charging phenomena in metal–oxide–p +-Si nanostructures. Technical Physics Letters, 42. 1090-1093 doi:10.1134/s1063785016110109
Sproul, A. B., Green, M. A. (1993) Intrinsic carrier concentration and minority‐carrier mobility of silicon from 77 to 300 K. Journal of Applied Physics, 73 (3). 1214-1225 doi:10.1063/1.353288
 
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