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McHugo, Scott A., Thompson, A. C., Périchaud, I., Martinuzzi, S. (1998) Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon. Applied Physics Letters, 72 (26). 3482-3484 doi:10.1063/1.121673

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Reference TypeJournal (article/letter/editorial)
TitleDirect correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon
JournalApplied Physics Letters
AuthorsMcHugo, Scott A.Author
Thompson, A. C.Author
Périchaud, I.Author
Martinuzzi, S.Author
Year1998 (June 29)Volume72
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.121673Search in ResearchGate
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Mindat Ref. ID8521405Long-form Identifiermindat:1:5:8521405:7
GUID0
Full ReferenceMcHugo, Scott A., Thompson, A. C., Périchaud, I., Martinuzzi, S. (1998) Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon. Applied Physics Letters, 72 (26). 3482-3484 doi:10.1063/1.121673
Plain TextMcHugo, Scott A., Thompson, A. C., Périchaud, I., Martinuzzi, S. (1998) Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon. Applied Physics Letters, 72 (26). 3482-3484 doi:10.1063/1.121673
In(1998, June) Applied Physics Letters Vol. 72 (26) AIP Publishing

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McHugo, Scott A., Thompson, A. C., Mohammed, A., Lamble, G., Périchaud, I., Martinuzzi, S., Werner, M., Rinio, M., Koch, W., Hoefs, H.-U., Haessler, C. (2001) Nanometer-scale metal precipitates in multicrystalline silicon solar cells. Journal of Applied Physics, 89 (8). 4282-4288 doi:10.1063/1.1330552
Martinuzzi, S., Gauthier, M., Barakel, D., Périchaud, I., Le Quang, N., Palais, O., Goaer, G. (2007) Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell properties. The European Physical Journal Applied Physics, 40 (1). 83-88 doi:10.1051/epjap:2007130
McHugo, Scott A. (1997) Release of metal impurities from structural defects in polycrystalline silicon. Applied Physics Letters, 71 (14). 1984-1986 doi:10.1063/1.119762
McHugo, Scott A., Thompson, A.C., Imaizumi, Masayuki, Hieslmair, H., Weber, Eicke R. (1997) Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon. Materials Science Forum, 258. 1795-1800 doi:10.4028/www.scientific.net/msf.258-263.1795
Cuevas, Andres, Kerr, Mark J., Samundsett, Christian, Ferrazza, Francesca, Coletti, Gianluca (2002) Millisecond minority carrier lifetimes in n-type multicrystalline silicon. Applied Physics Letters, 81 (26). 4952-4954 doi:10.1063/1.1529089
Martinuzzi, S., Perichaud, I., Simon, J. J. (1997) External gettering by aluminum–silicon alloying observed from carrier recombination at dislocations in float zone silicon wafers. Applied Physics Letters, 70 (20). 2744-2746 doi:10.1063/1.119009
Rapaport, R., Lubianiker, Y., Balberg, I., Fonseca, L. (1998) Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon. Applied Physics Letters, 72 (1). 103-105 doi:10.1063/1.120658
Simon, J. J., Périchaud, I., Burle, N., Pasquinelli, M., Martinuzzi, S. (1996) Influence of phosphorus diffusion on the recombination strength of dislocations in float zone silicon wafers. Journal of Applied Physics, 80 (9). 4921-4927 doi:10.1063/1.363535
McHugo, Scott A., Flink, C. (2000) Thermal stability of copper precipitates in silicon. Applied Physics Letters, 77 (22). 3598-3600 doi:10.1063/1.1328769
McHugo, Scott A., Mohammed, A., Thompson, A. C., Lai, B., Cai, Z. (2002) Copper precipitates in silicon: Precipitation, dissolution, and chemical state. Journal of Applied Physics, 91 (10). 6396pp. doi:10.1063/1.1471944
Seager, C. H. (1982) Temperature dependence of minority‐carrier recombination velocities at grain boundaries in silicon. Applied Physics Letters, 41 (9). 855-857 doi:10.1063/1.93675
 
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