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(1998, June) Applied Physics Letters Vol. 72 (26) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1998 (June)Volume72
Issue<   26
PublisherAIP Publishing
Mindat Ref. ID8521370Long-form Identifiermindat:1:5:8521370:2
GUID0
Full Reference(1998, June) Applied Physics Letters Vol. 72 (26) AIP Publishing
Plain Text(1998, June) Applied Physics Letters Vol. 72 (26) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 72. AIP Publishing

Contains

Hasan, Z., Biyikli, L., Macfarlane, P. I. (1998) Power-gated spectral holeburning in MgS:Eu2+, Eu3+: A case for high-density persistent spectral holeburning. Applied Physics Letters, 72 (26). 3399-3401 doi:10.1063/1.121677
Nicholson, J. W., Rudolph, W., Hager, G. (1998) Generation of 14 GHz radiation using a two frequency iodine laser. Applied Physics Letters, 72 (26). 3402-3404 doi:10.1063/1.121646
Baek, Yongsoon, Schiek, Roland, Stegeman, George, Assanto, Gaetano, Sohler, W. (1998) All-optical mode mixer spatial switch based on cascading in lithium niobate. Applied Physics Letters, 72 (26). 3405-3407 doi:10.1063/1.121647
Bai, G. F., Qiao, Y. P., Ma, Z. C., Zong, W. H., Qin, G. G. (1998) Electroluminescence from Si/Si oxynitride superlattices. Applied Physics Letters, 72 (26). 3408-3410 doi:10.1063/1.121648
Kou, L., Hall, D. C., Wu, H. (1998) Room-temperature 1.5 μm photoluminescence of Er3+-doped AlxGa1−xAs native oxides. Applied Physics Letters, 72 (26). 3411-3413 doi:10.1063/1.121649
Tsunekane, Masaki, Kimura, Shinji, Kimura, Mikio, Taguchi, Noboru, Inaba, Humio (1998) Continuous-wave, broadband tuning from 788 to 1640 nm by a doubly resonant, MgO:LiNbO3 optical parametric oscillator. Applied Physics Letters, 72 (26). 3414-3416 doi:10.1063/1.121650
Ghislotti, G., Masseroni, C., Zappettini, A., Martinelli, M., Mycielski, A. (1998) Room temperature photoinduced Faraday rotation in Hg1−xMnxTe alloys at 1550 nm. Applied Physics Letters, 72 (26). 3417-3419 doi:10.1063/1.121651
Yue, Zhou Z., An, Dechang, Chen, Ray T., Tang, Suning (1998) 1000 V/μm pulsed poling technique for photolime-gel electro-optic polymer with room-temperature repoling feature. Applied Physics Letters, 72 (26). 3420-3421 doi:10.1063/1.121652
Peng, Chubing, Mansuripur, M., Nagata, K. (1998) Edge detection readout signal and cross talk in phase-change optical data storage. Applied Physics Letters, 72 (26). 3422-3424 doi:10.1063/1.121653
Milster, T., Jiang, W., Walker, E., Burak, D., Claisse, P., Kelly, P., Binder, R. (1998) A single-mode high-power vertical cavity surface emitting laser. Applied Physics Letters, 72 (26). 3425-3427 doi:10.1063/1.121654
Popov, Andrei, Sherstnev, Victor, Yakovlev, Yury, Werle, Peter, Mücke, Robert (1998) Relaxation oscillations in single-frequency InAsSb narrow band-gap lasers. Applied Physics Letters, 72 (26). 3428-3430 doi:10.1063/1.121655
Sada, C., Borsella, E., Caccavale, F., Gonella, F., Segato, F., Korkishko, Yu. N., Fedorov, V. A., Morozova, T. M., Battaglin, G., Polloni, R. (1998) Erbium doping of LiNbO3 by the ion exchange process. Applied Physics Letters, 72 (26). 3431-3433 doi:10.1063/1.121656
Le, H. Q., Lin, C. H., Pei, S. S. (1998) Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers. Applied Physics Letters, 72 (26). 3434-3436 doi:10.1063/1.121657
Qin, L. C., Zhou, D., Krauss, A. R., Gruen, D. M. (1998) Growing carbon nanotubes by microwave plasma-enhanced chemical vapor deposition. Applied Physics Letters, 72 (26). 3437-3439 doi:10.1063/1.121658
Eumann, M., Schmitz, G., Franchy, R. (1998) Long rectangular islands of β-Ga2O3 on CoGa(001)—studied by electron energy loss spectroscopy and scanning tunneling microscopy. Applied Physics Letters, 72 (26). 3440-3442 doi:10.1063/1.121659
Shinde, S. R., Ramesh, R., Lofland, S. E., Bhagat, S. M., Ogale, S. B., Sharma, R. P., Venkatesan, T. (1998) Effect of lattice mismatch strains on the structural and magnetic properties of barium ferrite films. Applied Physics Letters, 72 (26). 3443-3445 doi:10.1063/1.121660
Yan, Feng, Wang, Ye-Ning (1998) The dielectric properties of polycrystalline C60. Applied Physics Letters, 72 (26). 3446-3448 doi:10.1063/1.121661
Chen, L. C., Lu, T. R., Kuo, C. T., Bhusari, D. M., Wu, J. J., Chen, K. H., Chen, T. M. (1998) The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen. Applied Physics Letters, 72 (26). 3449-3451 doi:10.1063/1.121662
Gungor, M. Rauf, Maroudas, Dimitrios (1998) Electromigration-induced failure of metallic thin films due to transgranular void propagation. Applied Physics Letters, 72 (26). 3452-3454 doi:10.1063/1.121663
Grigorenko, A. N., Nikitin, P. I., Toporov, A. Yu., Ghorbanzadeh, A. M., Perrone, A., Zocco, A., De Giorgi, M.-L. (1998) Evidence of ferromagnetic behavior of small liquid droplets produced from amorphous alloys by laser ablation. Applied Physics Letters, 72 (26). 3455-3457 doi:10.1063/1.121664
Yu, D. P., Bai, Z. G., Ding, Y., Hang, Q. L., Zhang, H. Z., Wang, J. J., Zou, Y. H., Qian, W., Xiong, G. C., Zhou, H. T., Feng, S. Q. (1998) Nanoscale silicon wires synthesized using simple physical evaporation. Applied Physics Letters, 72 (26). 3458-3460 doi:10.1063/1.121665
Luna, M., Colchero, J., Baró, A. M. (1998) Intermittent contact scanning force microscopy: The role of the liquid necks. Applied Physics Letters, 72 (26). 3461-3463 doi:10.1063/1.121666
Ruan, Like, Chen, D. M. (1998) Pinhole formation in solid phase epitaxial film of CoSi2 on Si(111). Applied Physics Letters, 72 (26). 3464-3466 doi:10.1063/1.121667
Wright, A. F., Furthmüller, J. (1998) Theoretical investigation of edge dislocations in AlN. Applied Physics Letters, 72 (26). 3467-3469 doi:10.1063/1.121668
Ahrenkiel, R. K., Ellingson, R., Johnston, S., Wanlass, M. (1998) Recombination lifetime of In0.53Ga0.47As as a function of doping density. Applied Physics Letters, 72 (26). 3470-3472 doi:10.1063/1.121669
Tang, P. J. P., Hardaway, H., Heber, J., Phillips, C. C., Pullin, M. J., Stradling, R. A., Yuen, W. T., Hart, L. (1998) Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells. Applied Physics Letters, 72 (26). 3473-3475 doi:10.1063/1.121670
King, Ya-Chin, Hu, Chenming, Fujioka, Hiroshi, Kamohara, Shiroo (1998) Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor. Applied Physics Letters, 72 (26). 3476-3478 doi:10.1063/1.121671
Ahmari, D. A., Hattendorf, M. L., Lemmerhirt, D. F., Yang, Q., Hartmann, Q. J., Baker, J. E., Stillman, G. E. (1998) Effects of alloy ambient on PdGe contacts on n-type GaAs. Applied Physics Letters, 72 (26). 3479-3481 doi:10.1063/1.121672
McHugo, Scott A., Thompson, A. C., Périchaud, I., Martinuzzi, S. (1998) Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon. Applied Physics Letters, 72 (26). 3482-3484 doi:10.1063/1.121673
Fukatsu, S., Ishikawa, Yukari, Saito, T., Shibata, N. (1998) SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen. Applied Physics Letters, 72 (26). 3485-3487 doi:10.1063/1.121674
Bonafos, C., Garrido, B., López, M., Romano-Rodriguez, A., González-Varona, O., Pérez-Rodrı́guez, A., Morante, J. R. (1998) Ion-beam synthesis and structural characterization of ZnS nanocrystals in SiO2. Applied Physics Letters, 72 (26). 3488-3490 doi:10.1063/1.121675
Moon, C. R., Kwon, S. D., Lim, H., Choe, Byung-Doo (1998) Influence of partial dopant ionization on the capacitance–voltage profiles of delta-doped structures. Applied Physics Letters, 72 (26). 3491-3493 doi:10.1063/1.121676
Chavez-Pirson, A., Temmyo, J., Kamada, H., Gotoh, H., Ando, H. (1998) Near-field optical spectroscopy and imaging of single InGaAs/AlGaAs quantum dots. Applied Physics Letters, 72 (26). 3494-3496 doi:10.1063/1.121638
Thio, Tineke, Solin, S. A. (1998) Giant magnetoresistance enhancement in inhomogeneous semiconductors. Applied Physics Letters, 72 (26). 3497-3499 doi:10.1063/1.121639
Biswas, R., Li, Y.-P., Pan, B. C. (1998) Enhanced stability of deuterium in silicon. Applied Physics Letters, 72 (26). 3500-3502 doi:10.1063/1.121640
Czerwinski, A., Simoen, E., Claeys, C. (1998) p-n junction peripheral current analysis using gated diode measurements. Applied Physics Letters, 72 (26). 3503-3505 doi:10.1063/1.121641
Kane, B. E., Facer, G. R., Dzurak, A. S., Lumpkin, N. E., Clark, R. G., Pfeiffer, L. N., West, K. W. (1998) Quantized conductance in quantum wires with gate-controlled width and electron density. Applied Physics Letters, 72 (26). 3506-3508 doi:10.1063/1.121642
Phillips, J., Kamath, K., Brock, T., Bhattacharya, P. (1998) Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors. Applied Physics Letters, 72 (26). 3509-3511 doi:10.1063/1.121643
Sydow, J. P., Buhrman, R. A., Moeckly, B. H. (1998) Basal plane oxygen vapor pressure of Co-doped YBa2Cu3O7−δ. Applied Physics Letters, 72 (26). 3512-3514 doi:10.1063/1.121644
Jansman, A. B. M., Izquierdo, M., Eiguren, A., Flokstra, J., Rogalla, H. (1998) Effective area in slotted high Tc dc washer superconducting quantum interference devices. Applied Physics Letters, 72 (26). 3515-3517 doi:10.1063/1.121645

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