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Le, H. Q., Lin, C. H., Pei, S. S. (1998) Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers. Applied Physics Letters, 72 (26). 3434-3436 doi:10.1063/1.121657

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Reference TypeJournal (article/letter/editorial)
TitleLow-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers
JournalApplied Physics Letters
AuthorsLe, H. Q.Author
Lin, C. H.Author
Pei, S. S.Author
Year1998 (June 29)Volume72
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.121657Search in ResearchGate
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Mindat Ref. ID8521389Long-form Identifiermindat:1:5:8521389:0
GUID0
Full ReferenceLe, H. Q., Lin, C. H., Pei, S. S. (1998) Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers. Applied Physics Letters, 72 (26). 3434-3436 doi:10.1063/1.121657
Plain TextLe, H. Q., Lin, C. H., Pei, S. S. (1998) Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers. Applied Physics Letters, 72 (26). 3434-3436 doi:10.1063/1.121657
In(1998, June) Applied Physics Letters Vol. 72 (26) AIP Publishing

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Dupont, E., McCaffrey, J. P., Liu, H. C., Buchanan, M., Yang, Rui Q., Lin, C.-H., Zhang, D., Pei, S. S. (1998) Demonstration of cascade process in InAs/GaInSb/AlSb mid-infrared light emitting devices. Applied Physics Letters, 72 (12). 1495-1497 doi:10.1063/1.121037
Le, H. Q., Arias, J. M., Zandian, M., Zucca, R., Liu, Y.‐Z. (1994) High‐power diode‐laser‐pumped midwave infrared HgCdTe/CdZnTe quantum‐well lasers. Applied Physics Letters, 65 (7). 810-812 doi:10.1063/1.112239
Yang, B. H., Zhang, D., Yang, Rui Q., Lin, C.-H., Murry, S. J., Pei, S. S. (1998) Mid-infrared interband cascade lasers with quantum efficiencies >200%. Applied Physics Letters, 72 (18). 2220-2222 doi:10.1063/1.121265
Yang, Rui Q., Yang, B. H., Zhang, D., Lin, C.-H., Murry, S. J., Wu, H., Pei, S. S. (1997) High power mid-infrared interband cascade lasers based on type-II quantum wells. Applied Physics Letters, 71 (17). 2409-2411 doi:10.1063/1.120076
Le, H. Q., Goodhue, W. D., Di Cecca, S. (1992) High‐brightness diode‐laser‐pumped semiconductor heterostructure lasers. Applied Physics Letters, 60 (11). 1280-1282 doi:10.1063/1.107316
Le, H. Q., Goodhue, W. D., Maki, P. A., Cecca, S. Di (1993) Diode‐laser‐pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4‐W average power. Applied Physics Letters, 63 (11). 1465-1467 doi:10.1063/1.109657
Chow, D. H., Miles, R. H., Hasenberg, T. C., Kost, A. R., Zhang, Y.‐H., Dunlap, H. L., West, L. (1995) Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices. Applied Physics Letters, 67 (25). 3700-3702 doi:10.1063/1.115354
Lin, Chih-Hsiang, Pei, S. S., Le, H. Q., Meyer, J. R., Felix, C. L. (1997) Low-threshold quasi-cw type-II quantum well lasers at wavelengths beyond 4 μm. Applied Physics Letters, 71 (22). 3281-3283 doi:10.1063/1.120313
Le, H. Q., Turner, G. W., Eglash, S. J., Choi, H. K., Coppeta, D. A. (1994) High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm. Applied Physics Letters, 64 (2). 152-154 doi:10.1063/1.111548
Choi, H. K., Eglash, S. J. (1992) High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density. Applied Physics Letters, 61 (10). 1154-1156 doi:10.1063/1.107630
Choi, H. K., Wang, C. A. (1990) InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency. Applied Physics Letters, 57 (4). 321-323 doi:10.1063/1.103678
 
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