Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Li, Y., Ng, G. I., Arulkumaran, S., Ye, G., Liu, Z. H., Ranjan, K., Ang, K. S. (2017) Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN. Journal of Applied Physics, 121 (4). 44504pp. doi:10.1063/1.4974959

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleInvestigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
JournalJournal of Applied Physics
AuthorsLi, Y.Author
Ng, G. I.Author
Arulkumaran, S.Author
Ye, G.Author
Liu, Z. H.Author
Ranjan, K.Author
Ang, K. S.Author
Year2017 (January 28)Volume121
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.4974959Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5207130Long-form Identifiermindat:1:5:5207130:2
GUID0
Full ReferenceLi, Y., Ng, G. I., Arulkumaran, S., Ye, G., Liu, Z. H., Ranjan, K., Ang, K. S. (2017) Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN. Journal of Applied Physics, 121 (4). 44504pp. doi:10.1063/1.4974959
Plain TextLi, Y., Ng, G. I., Arulkumaran, S., Ye, G., Liu, Z. H., Ranjan, K., Ang, K. S. (2017) Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN. Journal of Applied Physics, 121 (4). 44504pp. doi:10.1063/1.4974959
In(2017, January) Journal of Applied Physics Vol. 121 (4) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Li, Y., Ng, G. I., Arulkumaran, S., Liu, Z. H., Ranjan, K., Xing, W. C., Ang, K. S., Murmu, P. P., Kennedy, J. (2017) AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate. physica status solidi (a), 214 (3). 1600555pp. doi:10.1002/pssa.201600555
Liu, Z. H., Ng, G. I., Zhou, H., Arulkumaran, S., Maung, Y. K. T. (2011) Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation. Applied Physics Letters, 98 (11). 113506pp. doi:10.1063/1.3567927
Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Hofstetter, R., Li, Y., Anand, M. J., Ang, K. S., Maung, Y. K. T., Foo, S. C. (2013) Atomic layer deposition of ZrO2as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon. Applied Physics Letters, 103 (14). 142109pp. doi:10.1063/1.4824445
Arulkumaran, S., Ng, G. I., Liu, Z. H. (2007) Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon. Applied Physics Letters, 90 (17). 173504pp. doi:10.1063/1.2730748
Liu, Z. H., Ng, G. I., Arulkumaran, S., Maung, Y. K. T., Zhou, H. (2011) Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor. Applied Physics Letters, 98 (16). 163501pp. doi:10.1063/1.3573794
Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. (2003) Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 82 (18). 3110-3112 doi:10.1063/1.1571655
Arulkumaran, S., Ng, G. I., Liu, Z. H., Lee, C. H. (2007) High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon. Applied Physics Letters, 91 (8). 83516pp. doi:10.1063/1.2773987
Liu, Z. H., Arulkumaran, S., Ng, G. I. (2009) Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C. Applied Physics Letters, 94 (14). 142105pp. doi:10.1063/1.3114422
Arulkumaran, S., Ng, G. I., Tan, C. L., Liu, Z. H., Bu, J., Radhakrishnan, K., Aggerstam, T., Sjödin, M., Lourdudoss, S. (2006) Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing. Applied Physics Letters, 88 (2). 23502pp. doi:10.1063/1.2162092
Liu, Z. H., Ng, G. I., Arulkumaran, S., Maung, Y. K. T., Teo, K. L., Foo, S. C., Sahmuganathan, V. (2009) Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator. Applied Physics Letters, 95 (22). 223501pp. doi:10.1063/1.3268474
Radhakrishnan, K., Dharmarasu, N., Sun, Z., Arulkumaran, S., Ng, G. I. (2010) Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 97 (23). 232107pp. doi:10.1063/1.3518717
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 29, 2025 02:48:26
Go to top of page