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Radhakrishnan, K., Dharmarasu, N., Sun, Z., Arulkumaran, S., Ng, G. I. (2010) Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 97 (23). 232107pp. doi:10.1063/1.3518717

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Reference TypeJournal (article/letter/editorial)
TitleDemonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy
JournalApplied Physics Letters
AuthorsRadhakrishnan, K.Author
Dharmarasu, N.Author
Sun, Z.Author
Arulkumaran, S.Author
Ng, G. I.Author
Year2010 (December 6)Volume97
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.3518717Search in ResearchGate
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Mindat Ref. ID8588741Long-form Identifiermindat:1:5:8588741:9
GUID0
Full ReferenceRadhakrishnan, K., Dharmarasu, N., Sun, Z., Arulkumaran, S., Ng, G. I. (2010) Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 97 (23). 232107pp. doi:10.1063/1.3518717
Plain TextRadhakrishnan, K., Dharmarasu, N., Sun, Z., Arulkumaran, S., Ng, G. I. (2010) Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 97 (23). 232107pp. doi:10.1063/1.3518717
In(2010, December) Applied Physics Letters Vol. 97 (23) AIP Publishing

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