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Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I. (2015) Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy. Journal of Applied Physics, 117 (2). 25301pp. doi:10.1063/1.4905620

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsRavikiran, L.Author
Dharmarasu, N.Author
Radhakrishnan, K.Author
Agrawal, M.Author
Yiding, LinAuthor
Arulkumaran, S.Author
Vicknesh, S.Author
Ng, G. I.Author
Year2015 (January 14)Volume117
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4905620Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5201760Long-form Identifiermindat:1:5:5201760:5
GUID0
Full ReferenceRavikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I. (2015) Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy. Journal of Applied Physics, 117 (2). 25301pp. doi:10.1063/1.4905620
Plain TextRavikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I. (2015) Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy. Journal of Applied Physics, 117 (2). 25301pp. doi:10.1063/1.4905620
In(2015, January) Journal of Applied Physics Vol. 117 (2) AIP Publishing

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Ravikiran, L., Radhakrishnan, K., Munawar Basha, S., Dharmarasu, N., Agrawal, M., Manoj kumar, C. M., Arulkumaran, S., Ng, G. I. (2015) Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111). Journal of Applied Physics, 117 (24). 245305pp. doi:10.1063/1.4923035
Radhakrishnan, K., Dharmarasu, N., Sun, Z., Arulkumaran, S., Ng, G. I. (2010) Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 97 (23). 232107pp. doi:10.1063/1.3518717
Agrawal, M., Dharmarasu, N., Radhakrishnan, K., Ravikiran, L. (2013) Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy. Journal of Crystal Growth, 378. 283-286 doi:10.1016/j.jcrysgro.2012.12.164
Ravikiran, L., Radhakrishnan, K., Dharmarasu, N., Agrawal, M., Munawar Basha, S. (2013) Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111). Journal of Applied Physics, 114 (12). 123503pp. doi:10.1063/1.4822031
Anand, M. J., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ranjan, K., Vicknesh, S., Foo, S. C., Syamal, B., Zhou, X. (2015) Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111). Applied Physics Letters, 106 (8). 83508pp. doi:10.1063/1.4913841
Arulkumaran, S., Ng, G. I., Tan, C. L., Liu, Z. H., Bu, J., Radhakrishnan, K., Aggerstam, T., Sjödin, M., Lourdudoss, S. (2006) Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing. Applied Physics Letters, 88 (2). 23502pp. doi:10.1063/1.2162092
Haffouz, S., Tang, H., Rolfe, S., Bardwell, J. A. (2006) Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy. Applied Physics Letters, 88 (25). 252114pp. doi:10.1063/1.2215600
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Arulkumaran, S., Ng, G. I., Liu, Z. H., Lee, C. H. (2007) High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon. Applied Physics Letters, 91 (8). 83516pp. doi:10.1063/1.2773987
Li, Y., Ng, G. I., Arulkumaran, S., Ye, G., Liu, Z. H., Ranjan, K., Ang, K. S. (2017) Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN. Journal of Applied Physics, 121 (4). 44504pp. doi:10.1063/1.4974959
Arulkumaran, S., Ng, G. I., Liu, Z. H. (2007) Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon. Applied Physics Letters, 90 (17). 173504pp. doi:10.1063/1.2730748
 
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