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Okino, Hiroyuki, Kameshiro, Norifumi, Konishi, Kumiko, Shima, Akio, Yamada, Ren-ichi (2017) Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes. Journal of Applied Physics, 122 (23). 235704pp. doi:10.1063/1.5009344

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of high reverse currents of 4H-SiC Schottky-barrier diodes
JournalJournal of Applied Physics
AuthorsOkino, HiroyukiAuthor
Kameshiro, NorifumiAuthor
Konishi, KumikoAuthor
Shima, AkioAuthor
Yamada, Ren-ichiAuthor
Year2017 (December 21)Volume122
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.5009344Search in ResearchGate
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Mindat Ref. ID5208100Long-form Identifiermindat:1:5:5208100:8
GUID0
Full ReferenceOkino, Hiroyuki, Kameshiro, Norifumi, Konishi, Kumiko, Shima, Akio, Yamada, Ren-ichi (2017) Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes. Journal of Applied Physics, 122 (23). 235704pp. doi:10.1063/1.5009344
Plain TextOkino, Hiroyuki, Kameshiro, Norifumi, Konishi, Kumiko, Shima, Akio, Yamada, Ren-ichi (2017) Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes. Journal of Applied Physics, 122 (23). 235704pp. doi:10.1063/1.5009344
In(2017, December) Journal of Applied Physics Vol. 122 (23) AIP Publishing

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Konishi, Kumiko, Kameshiro, Norifumi, Yokoyama, Natsuki, Shima, Akio, Shimamoto, Yasuhiro (2017) Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes. Japanese Journal of Applied Physics, 56 (12) 121301 doi:10.7567/jjap.56.121301
Okino, Hiroyuki, Kameshiro, Norifumi, Konishi, Kumiko, Inada, Naomi, Mochizuki, Kazuhiro, Shima, Akio, Yokoyama, Natsuki, Yamada, Renichi (2013) Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes. Materials Science Forum, 740. 881-886 doi:10.4028/www.scientific.net/msf.740-742.881
Konishi, Kumiko, Kameshiro, Norifumi, Yokoyama, Natsuki, Shima, Akio, Shimamoto, Yasuhiro (2015) Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes. Materials Science Forum, 821. 596-599 doi:10.4028/www.scientific.net/msf.821-823.596
Bu, Yuan, Yoshimoto, Hiroyuki, Konishi, Kumiko, Shima, Akio, Shimamoto, Yasuhiro (2017) 6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation. Materials Science Forum, 897. 435-438 doi:10.4028/www.scientific.net/msf.897.435
Bu, Yuan, Yoshimoto, Hiroyuki, Watanabe, Naoki, Shima, Akio (2017) Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes. Journal of Applied Physics, 122 (24). 244504pp. doi:10.1063/1.5001370
Konishi, Kumiko, Fujita, Ryusei, Kobayashi, Keisuke, Yoneyama, Akio, Ishiji, Kotaro, Okino, Hiroyuki, Shima, Akio, Ujihara, Toru (2021) In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations. Journal of Applied Physics, 130 (14) 145703pp. doi:10.1063/5.0063082
Katsuno, Takashi, Watanabe, Yukihiko, Fujiwara, Hirokazu, Konishi, Masaki, Yamamoto, Takeo, Endo, Takeshi (2011) Effects of Surface and Crystalline Defects on Reverse Characteristics of 4H-SiC Junction Barrier Schottky Diodes. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dp04
Katsuno, Takashi, Watanabe, Yukihiko, Fujiwara, Hirokazu, Konishi, Masaki, Yamamoto, Takeo, Endo, Takeshi (2011) Effects of Surface and Crystalline Defects on Reverse Characteristics of 4H-SiC Junction Barrier Schottky Diodes. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dp04
Konishi, Kumiko, Fujita, Ryusei, Shima, Akio, Shimamoto, Yasuhiro (2017) Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET. Materials Science Forum, 897. 214-217 doi:10.4028/www.scientific.net/msf.897.214
Katsuno, Takashi, Watanabe, Yukihiko, Fujiwara, Hirokazu, Konishi, Masaki, Naruoka, Hideki, Morimoto, Jun, Morino, Tomoo, Endo, Takeshi (2011) Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes. Applied Physics Letters, 98 (22). 222111pp. doi:10.1063/1.3597413
Matsushima, Hiroyuki, Okino, Hiroyuki, Mochizuki, Kazuhiro, Yamada, Renichi (2016) Analyzing charge distribution in the termination area of 4H-SiC diodes by measuring depletion-layer capacitance. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04er17
 
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