Katsuno, Takashi, Watanabe, Yukihiko, Fujiwara, Hirokazu, Konishi, Masaki, Naruoka, Hideki, Morimoto, Jun, Morino, Tomoo, Endo, Takeshi (2011) Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes. Applied Physics Letters, 98 (22). 222111pp. doi:10.1063/1.3597413
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes | ||
| Journal | Applied Physics Letters | ||
| Authors | Katsuno, Takashi | Author | |
| Watanabe, Yukihiko | Author | ||
| Fujiwara, Hirokazu | Author | ||
| Konishi, Masaki | Author | ||
| Naruoka, Hideki | Author | ||
| Morimoto, Jun | Author | ||
| Morino, Tomoo | Author | ||
| Endo, Takeshi | Author | ||
| Year | 2011 (May 30) | Volume | 98 |
| Issue | 22 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3597413Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8593480 | Long-form Identifier | mindat:1:5:8593480:5 |
| GUID | 0 | ||
| Full Reference | Katsuno, Takashi, Watanabe, Yukihiko, Fujiwara, Hirokazu, Konishi, Masaki, Naruoka, Hideki, Morimoto, Jun, Morino, Tomoo, Endo, Takeshi (2011) Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes. Applied Physics Letters, 98 (22). 222111pp. doi:10.1063/1.3597413 | ||
| Plain Text | Katsuno, Takashi, Watanabe, Yukihiko, Fujiwara, Hirokazu, Konishi, Masaki, Naruoka, Hideki, Morimoto, Jun, Morino, Tomoo, Endo, Takeshi (2011) Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes. Applied Physics Letters, 98 (22). 222111pp. doi:10.1063/1.3597413 | ||
| In | (2011, May) Applied Physics Letters Vol. 98 (22) AIP Publishing | ||
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