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Garcia, C., Pradhan, N. R., Rhodes, D., Balicas, L., McGill, S. A. (2018) Photogating and high gain in ReS2 field-effect transistors. Journal of Applied Physics, 124 (20). 204306pp. doi:10.1063/1.5050821

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Reference TypeJournal (article/letter/editorial)
TitlePhotogating and high gain in ReS2 field-effect transistors
JournalJournal of Applied Physics
AuthorsGarcia, C.Author
Pradhan, N. R.Author
Rhodes, D.Author
Balicas, L.Author
McGill, S. A.Author
Year2018 (November 28)Volume124
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.5050821Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5210156Long-form Identifiermindat:1:5:5210156:0
GUID0
Full ReferenceGarcia, C., Pradhan, N. R., Rhodes, D., Balicas, L., McGill, S. A. (2018) Photogating and high gain in ReS2 field-effect transistors. Journal of Applied Physics, 124 (20). 204306pp. doi:10.1063/1.5050821
Plain TextGarcia, C., Pradhan, N. R., Rhodes, D., Balicas, L., McGill, S. A. (2018) Photogating and high gain in ReS2 field-effect transistors. Journal of Applied Physics, 124 (20). 204306pp. doi:10.1063/1.5050821
In(2018, November) Journal of Applied Physics Vol. 124 (20) AIP Publishing

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MacDonald, R. I. (1981) High gain optical detection with GaAs field effect transistors. Applied Optics, 20. 591pp. doi:10.1364/ao.20.000591
Jenkins, K. A., Farmer, D. B., Han, S.-J., Dimitrakopoulos, C., Oida, S., Valdes-Garcia, A. (2013) Linearity of graphene field-effect transistors. Applied Physics Letters, 103 (17). 173115pp. doi:10.1063/1.4826932
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Hu, H. J., Zhen, W. L., Weng, S. R., Li, Y. D., Niu, R., Yue, Z. L., Xu, F., Pi, L., Zhang, C. J., Zhu, W. K. (2022) Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires. Applied Physics Letters, 120 (20) 201101 doi:10.1063/5.0080334
Abeles, J. H., Leheny, R. F., Chang, G. K., Allen, S. J. (1986) Experimental measurement of a high‐field dipole in GaAs field‐effect transistors. Applied Physics Letters, 49 (20). 1387-1389 doi:10.1063/1.97332
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