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Pradhan, N. R., Rhodes, D., Zhang, Q., Talapatra, S., Terrones, M., Ajayan, P. M., Balicas, L. (2013) Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2. Applied Physics Letters, 102 (12). 123105pp. doi:10.1063/1.4799172

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Reference TypeJournal (article/letter/editorial)
TitleIntrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
JournalApplied Physics Letters
AuthorsPradhan, N. R.Author
Rhodes, D.Author
Zhang, Q.Author
Talapatra, S.Author
Terrones, M.Author
Ajayan, P. M.Author
Balicas, L.Author
Year2013 (March 25)Volume102
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.4799172Search in ResearchGate
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Mindat Ref. ID8611211Long-form Identifiermindat:1:5:8611211:8
GUID0
Full ReferencePradhan, N. R., Rhodes, D., Zhang, Q., Talapatra, S., Terrones, M., Ajayan, P. M., Balicas, L. (2013) Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2. Applied Physics Letters, 102 (12). 123105pp. doi:10.1063/1.4799172
Plain TextPradhan, N. R., Rhodes, D., Zhang, Q., Talapatra, S., Terrones, M., Ajayan, P. M., Balicas, L. (2013) Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2. Applied Physics Letters, 102 (12). 123105pp. doi:10.1063/1.4799172
In(2013, March) Applied Physics Letters Vol. 102 (12) AIP Publishing

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