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Kudrawiec, R., Kopaczek, J., Delorme, O., Polak, M. P., Gladysiewicz, M., Luna, E., Cerutti, L., Tournié, E., Rodriguez, J. B. (2019) Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment. Journal of Applied Physics, 125 (20). 205706pp. doi:10.1063/1.5094159

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Reference TypeJournal (article/letter/editorial)
TitleType I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
JournalJournal of Applied Physics
AuthorsKudrawiec, R.Author
Kopaczek, J.Author
Delorme, O.Author
Polak, M. P.Author
Gladysiewicz, M.Author
Luna, E.Author
Cerutti, L.Author
Tournié, E.Author
Rodriguez, J. B.Author
Year2019 (May 28)Volume125
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.5094159Search in ResearchGate
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Mindat Ref. ID5211204Long-form Identifiermindat:1:5:5211204:3
GUID0
Full ReferenceKudrawiec, R., Kopaczek, J., Delorme, O., Polak, M. P., Gladysiewicz, M., Luna, E., Cerutti, L., Tournié, E., Rodriguez, J. B. (2019) Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment. Journal of Applied Physics, 125 (20). 205706pp. doi:10.1063/1.5094159
Plain TextKudrawiec, R., Kopaczek, J., Delorme, O., Polak, M. P., Gladysiewicz, M., Luna, E., Cerutti, L., Tournié, E., Rodriguez, J. B. (2019) Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment. Journal of Applied Physics, 125 (20). 205706pp. doi:10.1063/1.5094159
In(2019, May) Journal of Applied Physics Vol. 125 (20) AIP Publishing

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Rogowicz, E., Kopaczek, J., Polak, M. P., Delorme, O., Cerutti, L., Tournié, E., Rodriguez, J.-B., Kudrawiec, R., Syperek, M. (2022) Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range. Scientific Reports, 12 (1) doi:10.1038/s41598-022-16966-x
Kudrawiec, R., Kopaczek, J., Polak, M. P., Scharoch, P., Gladysiewicz, M., Misiewicz, J., Richards, R. D., Bastiman, F., David, J. P. R. (2014) Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells. Journal of Applied Physics, 116 (23). 233508pp. doi:10.1063/1.4904740
Delorme, O., Cerutti, L., Luna, E., Narcy, G., Trampert, A., Tournié, E., Rodriguez, J.-B. (2017) GaSbBi/GaSb quantum well laser diodes. Applied Physics Letters, 110 (22). 222106pp. doi:10.1063/1.4984799
Luna, E., Delorme, O., Cerutti, L., Tournié, E., Rodriguez, J.-B., Trampert, A. (2018) Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications. Applied Physics Letters, 112 (15). 151905pp. doi:10.1063/1.5024199
Delorme, O., Cerutti, L., Luna, E., Trampert, A., Tournié, E., Rodriguez, J.-B. (2019) Molecular-beam epitaxy of GaInSbBi alloys. Journal of Applied Physics, 126 (15). 155304pp. doi:10.1063/1.5096226
Gladysiewicz, M., Kudrawiec, R., Wartak, M. S. (2016) Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range. Journal of Applied Physics, 119 (7). 75701pp. doi:10.1063/1.4941939
Polak, M P, Scharoch, P, Kudrawiec, R, Kopaczek, J, Winiarski, M J, Linhart, W M, Rajpalke, M K, Yu, K M, Jones, T S, Ashwin, M J, Veal, T D (2014) Theoretical and experimental studies of electronic band structure for GaSb1−xBix in the dilute Bi regime. Journal of Physics D: Applied Physics, 47. 355107pp. doi:10.1088/0022-3727/47/35/355107
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Reboul, J. R., Cerutti, L., Rodriguez, J. B., Grech, P., Tournié, E. (2011) Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si. Applied Physics Letters, 99 (12). 121113pp. doi:10.1063/1.3644983
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