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Rodriguez, J. B., Cerutti, L., Tournié, E. (2009) GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature. Applied Physics Letters, 94 (2). 23506pp. doi:10.1063/1.3072596

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Reference TypeJournal (article/letter/editorial)
TitleGaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature
JournalApplied Physics Letters
AuthorsRodriguez, J. B.Author
Cerutti, L.Author
Tournié, E.Author
Year2009 (January 12)Volume94
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.3072596Search in ResearchGate
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Mindat Ref. ID8574135Long-form Identifiermindat:1:5:8574135:7
GUID0
Full ReferenceRodriguez, J. B., Cerutti, L., Tournié, E. (2009) GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature. Applied Physics Letters, 94 (2). 23506pp. doi:10.1063/1.3072596
Plain TextRodriguez, J. B., Cerutti, L., Tournié, E. (2009) GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature. Applied Physics Letters, 94 (2). 23506pp. doi:10.1063/1.3072596
In(2009, January) Applied Physics Letters Vol. 94 (2) AIP Publishing

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Rodriguez, J. B., Cerutti, L., Grech, P., Tournié, E. (2009) Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate. Applied Physics Letters, 94 (6). 61124pp. doi:10.1063/1.3082098
Reboul, J. R., Cerutti, L., Rodriguez, J. B., Grech, P., Tournié, E. (2011) Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si. Applied Physics Letters, 99 (12). 121113pp. doi:10.1063/1.3644983
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Delorme, O., Cerutti, L., Luna, E., Narcy, G., Trampert, A., Tournié, E., Rodriguez, J.-B. (2017) GaSbBi/GaSb quantum well laser diodes. Applied Physics Letters, 110 (22). 222106pp. doi:10.1063/1.4984799
Hosoda, Takashi, Kipshidze, Gela, Shterengas, Leon, Suchalkin, Sergey, Belenky, Gregory (2009) 200 mW type I GaSb-based laser diodes operating at 3 μm: Role of waveguide width. Applied Physics Letters, 94 (26). 261104pp. doi:10.1063/1.3159819
Kudrawiec, R., Kopaczek, J., Delorme, O., Polak, M. P., Gladysiewicz, M., Luna, E., Cerutti, L., Tournié, E., Rodriguez, J. B. (2019) Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment. Journal of Applied Physics, 125 (20). 205706pp. doi:10.1063/1.5094159
Apiratikul, P., He, L., Richardson, C. J. K. (2013) 2 μm laterally coupled distributed-feedback GaSb-based metamorphic laser grown on a GaAs substrate. Applied Physics Letters, 102 (23). 231101pp. doi:10.1063/1.4808265
Shterengas, L., Belenky, G., Kipshidze, G., Hosoda, T. (2008) Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power. Applied Physics Letters, 92 (17). 171111pp. doi:10.1063/1.2919720
Eibelhuber, M., Schwarzl, T., Pichler, S., Heiss, W., Springholz, G. (2010) Near room temperature continuous-wave laser operation from type-I interband transitions at wavelengths beyond 4 μm. Applied Physics Letters, 97 (6). 61103pp. doi:10.1063/1.3478834
Qiu, Yueming, Uhl, David, Keo, Sam (2004) Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate. Applied Physics Letters, 84 (2). 263-265 doi:10.1063/1.1640467
Eibelhuber, M., Schwarzl, T., Springholz, G., Heiss, W. (2009) Lead salt microdisk lasers operating in continuous wave mode at 5.3 μm wavelength. Applied Physics Letters, 94 (2). 21118pp. doi:10.1063/1.3072358
 
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