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Prüßing, Jan K., Böckendorf, Tim, Hamdana, Gerry, Peiner, Erwin, Bracht, Hartmut (2020) Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy. Journal of Applied Physics, 127 (5). 55703pp. doi:10.1063/1.5134558

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Reference TypeJournal (article/letter/editorial)
TitleDefect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy
JournalJournal of Applied Physics
AuthorsPrüßing, Jan K.Author
Böckendorf, TimAuthor
Hamdana, GerryAuthor
Peiner, ErwinAuthor
Bracht, HartmutAuthor
Year2020 (February 7)Volume127
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.5134558Search in ResearchGate
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Mindat Ref. ID5213088Long-form Identifiermindat:1:5:5213088:1
GUID0
Full ReferencePrüßing, Jan K., Böckendorf, Tim, Hamdana, Gerry, Peiner, Erwin, Bracht, Hartmut (2020) Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy. Journal of Applied Physics, 127 (5). 55703pp. doi:10.1063/1.5134558
Plain TextPrüßing, Jan K., Böckendorf, Tim, Hamdana, Gerry, Peiner, Erwin, Bracht, Hartmut (2020) Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy. Journal of Applied Physics, 127 (5). 55703pp. doi:10.1063/1.5134558
In(2020, February) Journal of Applied Physics Vol. 127 (5) AIP Publishing


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