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Hill, Chris (1987) Shallow junctions by ion implantation and rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 348-358 doi:10.1016/s0168-583x(87)80071-x

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Reference TypeJournal (article/letter/editorial)
TitleShallow junctions by ion implantation and rapid thermal annealing
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsHill, ChrisAuthor
Year1987 (January)Volume19
PublisherElsevier BV
DOIdoi:10.1016/s0168-583x(87)80071-xSearch in ResearchGate
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Mindat Ref. ID5587713Long-form Identifiermindat:1:5:5587713:2
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Full ReferenceHill, Chris (1987) Shallow junctions by ion implantation and rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 348-358 doi:10.1016/s0168-583x(87)80071-x
Plain TextHill, Chris (1987) Shallow junctions by ion implantation and rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 348-358 doi:10.1016/s0168-583x(87)80071-x
In(1987) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 19. Elsevier BV

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Gerard, P. (1987) Ion implantation in magnetic garnet. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 843-850 doi:10.1016/s0168-583x(87)80169-6
Tokuyama, Takashi (1987) Trends in ion implantation in silicon VLSI technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 299-306 doi:10.1016/s0168-583x(87)80061-7
Ohira, Shigeo, Iwaki, Masaya (1987) Formation of ain by nitrogen molecule ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 162-166 doi:10.1016/s0168-583x(87)80034-4
(1987) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. doi:10.1016/s0168-583x(87)80003-4
Zheng, L.R., Phillips, J.R., Revesz, P., Mayer, J.W. (1987) Implantation of carbon to stabilize TiSi2 during thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 598-602 doi:10.1016/s0168-583x(87)80120-9
Liang, J.H., Sang, Y.J. (2004) Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 219. 778-782 doi:10.1016/j.nimb.2004.01.162
Takeuchi, D., Shimada, N., Matsuo, J., Yamada, I. (1997) Shallow junction formation by polyatomic cluster ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 121 (1). 345-348 doi:10.1016/s0168-583x(96)00451-x
(1987) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. doi:10.1016/s0168-583x(87)80001-0
Braunstein, G.H., Dresselhaus, G., Withrow, S.P. (1987) Synthesis of dilute magnetic semiconductors by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 851-855 doi:10.1016/s0168-583x(87)80170-2
Chandler, P.J., Townsend, P.D. (1987) Detailed analysis of refractive index effects produced by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 921-926 doi:10.1016/s0168-583x(87)80185-4
Li, Y.H., Pogany, A.P., Harrison, H.B., Williams, J.S. (1987) Characterisation of BF2+ and B+implanted silicon after rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 521-525 doi:10.1016/s0168-583x(87)80104-0
 
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