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Li, Y.H., Pogany, A.P., Harrison, H.B., Williams, J.S. (1987) Characterisation of BF2+ and B+implanted silicon after rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 521-525 doi:10.1016/s0168-583x(87)80104-0

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Reference TypeJournal (article/letter/editorial)
TitleCharacterisation of BF2+ and B+implanted silicon after rapid thermal annealing
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsLi, Y.H.Author
Pogany, A.P.Author
Harrison, H.B.Author
Williams, J.S.Author
Year1987 (January)Volume19
PublisherElsevier BV
DOIdoi:10.1016/s0168-583x(87)80104-0Search in ResearchGate
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Mindat Ref. ID5587780Long-form Identifiermindat:1:5:5587780:4
GUID0
Full ReferenceLi, Y.H., Pogany, A.P., Harrison, H.B., Williams, J.S. (1987) Characterisation of BF2+ and B+implanted silicon after rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 521-525 doi:10.1016/s0168-583x(87)80104-0
Plain TextLi, Y.H., Pogany, A.P., Harrison, H.B., Williams, J.S. (1987) Characterisation of BF2+ and B+implanted silicon after rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 521-525 doi:10.1016/s0168-583x(87)80104-0
In(1987) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 19. Elsevier BV

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Elliman, R.G., Williams, J.S., Johnson, S.T., Pogany, A.P. (1986) Characterisation of MeV neon damage in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 15 (1). 439-442 doi:10.1016/0168-583x(86)90340-x
(1987) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. doi:10.1016/s0168-583x(87)80001-0
Hill, Chris (1987) Shallow junctions by ion implantation and rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 348-358 doi:10.1016/s0168-583x(87)80071-x
Elliman, R.G., Johnson, S.T., Pogany, A.P., Williams, J.S. (1985) Ion beam induced epitaxial crystallisation of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 310-315 doi:10.1016/0168-583x(85)90571-3
Poate, J.M., Jacobson, D.C., Williams, J.S., Elliman, R.G., Boerma, D.O. (1987) Diffusion of implanted impurities in amorphous Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 480-483 doi:10.1016/s0168-583x(87)80095-2
Grob, J.J., Unamuno, S., Grob, A., Ajaka, M., Slaoui, A., Stuck, R. (1987) Activation and diffusion during rapid thermal annealing of arsenic and boron implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 501-506 doi:10.1016/s0168-583x(87)80100-3
Bubb, I.F., Chivers, D.J., Liu, J.R., Pogany, A.P., Short, K.T., Wagenfeld, H.K., Williams, J.S. (1984) Heavy ion induced damage and annealing processes in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2 (1). 761-765 doi:10.1016/0168-583x(84)90310-0
Kanber, H. (1987) Comparison of rapid thermal annealing and controlled atmosphere annealing of ion implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 24. 575-580 doi:10.1016/0168-583x(87)90712-9
(1987) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. doi:10.1016/s0168-583x(87)80003-4
Johnson, S.T., Cozzolino, C., Williams, J.S. (1987) Ion beam mixing of Sn layers with GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 762-766 doi:10.1016/s0168-583x(87)80153-2
Weiss, B.L., Naden, J.M. (1987) Annealing effects in He+ implanted optical waveguides in LiNbO3. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 595-597 doi:10.1016/s0168-583x(87)80119-2
 
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