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Grob, J.J., Unamuno, S., Grob, A., Ajaka, M., Slaoui, A., Stuck, R. (1987) Activation and diffusion during rapid thermal annealing of arsenic and boron implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 501-506 doi:10.1016/s0168-583x(87)80100-3

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Reference TypeJournal (article/letter/editorial)
TitleActivation and diffusion during rapid thermal annealing of arsenic and boron implanted silicon
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsGrob, J.J.Author
Unamuno, S.Author
Grob, A.Author
Ajaka, M.Author
Slaoui, A.Author
Stuck, R.Author
Year1987 (January)Volume19
PublisherElsevier BV
DOIdoi:10.1016/s0168-583x(87)80100-3Search in ResearchGate
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Mindat Ref. ID5587772Long-form Identifiermindat:1:5:5587772:5
GUID0
Full ReferenceGrob, J.J., Unamuno, S., Grob, A., Ajaka, M., Slaoui, A., Stuck, R. (1987) Activation and diffusion during rapid thermal annealing of arsenic and boron implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 501-506 doi:10.1016/s0168-583x(87)80100-3
Plain TextGrob, J.J., Unamuno, S., Grob, A., Ajaka, M., Slaoui, A., Stuck, R. (1987) Activation and diffusion during rapid thermal annealing of arsenic and boron implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 501-506 doi:10.1016/s0168-583x(87)80100-3
In(1987) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 19. Elsevier BV

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Maillet, S., Stuck, R., Grob, J.J., Golanski, A., Pantel, R., Perio, A. (1987) High temperature oxygen implantation in silicon: Soil structure formation characteristics. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 294-298 doi:10.1016/s0168-583x(87)80060-5
Grob, A., Grob, J.J., Golanski, A. (1987) Damage created in silicon by BFn+ (1≤ n ≤ 3) and PFn+ (1⪯ n:≤ 5) implantations. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 55-60 doi:10.1016/s0168-583x(87)80014-9
Armigliato, A., Guimaraes, S., Solmi, S., Kögler, R., Wieser, E. (1987) Comparison of boron diffusivity during rapid thermal annealing in predamaged, preamorphized and crystalline silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 512-515 doi:10.1016/s0168-583x(87)80102-7
Grob, A., Grob, J.J., Thévenin, P., Siffert, P. (1991) A dechanneling investigation of MeV oxygen implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 58 (2). 236-241 doi:10.1016/0168-583x(91)95594-4
Thevenin, P., Grob, J.J., Stuck, R., Siffert, P. (1992) Longitudinal and transversal moments of the distribution of boron ions implanted in silicon in the MeV energy range. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (3). 346-349 doi:10.1016/0168-583x(92)95254-o
Kögler, R., Wieser, E., Voelskow, M., Otto, G. (1987) Transient enhanced diffusion and electrical activation of As in Si during rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 516-520 doi:10.1016/s0168-583x(87)80103-9
Grob, J.J., Grob, A., Thevenin, P., Siffert, P. (1988) Transverse straggling of MeV oxygen ions implanted in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 30 (1). 34-37 doi:10.1016/0168-583x(88)90075-4
Li, Y.H., Pogany, A.P., Harrison, H.B., Williams, J.S. (1987) Characterisation of BF2+ and B+implanted silicon after rapid thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 521-525 doi:10.1016/s0168-583x(87)80104-0
Roqueta, F., Grob, A., Grob, J.J., Jérisian, R., Stoquert, J.P., Ventura, L. (1999) Stability of cavities formed by He+ implantation in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 147 (1). 298-303 doi:10.1016/s0168-583x(98)00538-2
Vos, M., Boerma, D.O. (1987) Dechanneling caused by unidirectional contraction in boron implanted laser-annealed silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 340-344 doi:10.1016/s0168-583x(87)80069-1
Grob, A., Grob, J.J., Siffert, P. (1992) Damage created in silicon by 1 MeV O+ ions as a function of beam power. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (3). 309-313 doi:10.1016/0168-583x(92)95247-o
 
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