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Chen, James T.C. (1987) Monitoring low dose single implanted layers with four-point probe technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 526-528 doi:10.1016/0168-583x(87)90897-4

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Reference TypeJournal (article/letter/editorial)
TitleMonitoring low dose single implanted layers with four-point probe technology
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsChen, James T.C.Author
Year1987 (January)Volume21
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(87)90897-4Search in ResearchGate
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Mindat Ref. ID5588222Long-form Identifiermindat:1:5:5588222:2
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Full ReferenceChen, James T.C. (1987) Monitoring low dose single implanted layers with four-point probe technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 526-528 doi:10.1016/0168-583x(87)90897-4
Plain TextChen, James T.C. (1987) Monitoring low dose single implanted layers with four-point probe technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 526-528 doi:10.1016/0168-583x(87)90897-4
In(1987, January) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 21 (1) Elsevier BV

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(1987) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). doi:10.1016/0168-583x(87)90130-3
(1987) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). doi:10.1016/0168-583x(87)90802-0
Smith, T.C. (1987) Status of IC applications of ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 90-95 doi:10.1016/0168-583x(87)90804-4
(1987) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). doi:10.1016/0168-583x(87)90128-5
(1987) Preface. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 23 (1). doi:10.1016/0168-583x(87)90403-4
Hautala, M., Lappalainen, R. (1987) Factors affecting the distributions of implanted ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 28 (4). 519-526 doi:10.1016/0168-583x(87)90497-6
(1987) Calendar. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 79-81 doi:10.1016/0168-583x(87)90144-3
(1987) Subject index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 649-653 doi:10.1016/0168-583x(87)90928-1
(1987) Author index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 639-648 doi:10.1016/0168-583x(87)90927-x
(1987) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 29 (1). doi:10.1016/0168-583x(87)90191-1
(1987) Committee. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 22 (1). doi:10.1016/0168-583x(87)90283-7
 
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