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Hill, Chris, Hunt, Peter (1991) Ion implantation in bipolar technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 1-8 doi:10.1016/0168-583x(91)96125-5

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Reference TypeJournal (article/letter/editorial)
TitleIon implantation in bipolar technology
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsHill, ChrisAuthor
Hunt, PeterAuthor
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96125-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5596215Long-form Identifiermindat:1:5:5596215:7
GUID0
Full ReferenceHill, Chris, Hunt, Peter (1991) Ion implantation in bipolar technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 1-8 doi:10.1016/0168-583x(91)96125-5
Plain TextHill, Chris, Hunt, Peter (1991) Ion implantation in bipolar technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 1-8 doi:10.1016/0168-583x(91)96125-5
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

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Holmes, A.J.T., Proudfoot, G. (1991) Negative-ion sources for ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 323-327 doi:10.1016/0168-583x(91)96186-o
Cheung, Nathan W. (1991) Plasma immersion ion implantation for ULSI processing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 811-820 doi:10.1016/0168-583x(91)96285-s
(1991) Author index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 905-920 doi:10.1016/0168-583x(91)96305-5
Seidel, Thomas E. (1991) Implantation in the 1990s. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 17-19 doi:10.1016/0168-583x(91)96127-7
Svensson, B.G., Mohadjeri, B. (1991) Isotope effects for ion-implantation profiles in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 650-654 doi:10.1016/0168-583x(91)96251-f
(1991) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). doi:10.1016/0168-583x(91)96122-2
Thompson, Phillip E. (1991) MeV ion implantation in GaAs technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 592-599 doi:10.1016/0168-583x(91)95284-k
Stephens, K.G. (1991) Editorial. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). doi:10.1016/0168-583x(91)96123-3
Harriott, L.R. (1991) The technology of finely focused ion beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 802-810 doi:10.1016/0168-583x(91)96284-r
Küsters, K.H., Mühlhoff, H.M., Cerva, H. (1991) Application of ion implantation in submicron CMOS processes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 9-16 doi:10.1016/0168-583x(91)96126-6
Yarling, C.B., Keenan, W.A., Larson, L.A. (1991) The history of uniformity mapping in ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 235-242 doi:10.1016/0168-583x(91)96169-l
 
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