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Chu, C.H., Tsai, E.L., Chao, W.Y., Chen, L.J. (1991) Annealing behaviors of residual defects in high-dose BF+2-implanted (001)Si under different implantation conditions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 193-197 doi:10.1016/0168-583x(91)96160-m

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Reference TypeJournal (article/letter/editorial)
TitleAnnealing behaviors of residual defects in high-dose BF+2-implanted (001)Si under different implantation conditions
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsChu, C.H.Author
Tsai, E.L.Author
Chao, W.Y.Author
Chen, L.J.Author
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96160-mSearch in ResearchGate
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Mindat Ref. ID5596287Long-form Identifiermindat:1:5:5596287:4
GUID0
Full ReferenceChu, C.H., Tsai, E.L., Chao, W.Y., Chen, L.J. (1991) Annealing behaviors of residual defects in high-dose BF+2-implanted (001)Si under different implantation conditions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 193-197 doi:10.1016/0168-583x(91)96160-m
Plain TextChu, C.H., Tsai, E.L., Chao, W.Y., Chen, L.J. (1991) Annealing behaviors of residual defects in high-dose BF+2-implanted (001)Si under different implantation conditions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 193-197 doi:10.1016/0168-583x(91)96160-m
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

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Chu, C.H., Chen, L.J. (1991) Annealing behavior of low energy, high dose BF2+ implanted (001) Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 391-394 doi:10.1016/0168-583x(91)95244-8
Hsu, S.N., Chen, L.J., Lau, S.S. (1991) Effects of substrate temperature on the annealing behavior of residual defects in high-dose As+ implanted (001) Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1037-1040 doi:10.1016/0168-583x(91)95759-7
Hsu, S.N., Chen, L.J. (1991) Annealing behavior of dislocation loops near the projected ion range in high-dose As+- and P+-implanted (001) Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 620-624 doi:10.1016/0168-583x(91)96244-f
Nieh, C.W., Chen, L.J. (1991) Annealing behaviour of BF2+ implanted (001) and (111) Si inside miniature size oxide openings. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 831-835 doi:10.1016/0168-583x(91)96288-v
Yang, J.J., Chen, L.J. (1997) Characterization and removal of residual defects in high dose, very low energy BF2+-implanted (001) Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 121 (1). 291-294 doi:10.1016/s0168-583x(96)00443-0
Hazdra, P., Has̆lar, V., Bartos̆, M. (1991) The influence of implantation temperature and subsequent annealing on residual implantation defects in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 637-641 doi:10.1016/0168-583x(91)96248-j
Ellingboe, S.L., Ridgway, M.C. (1995) Implantation-induced defects in high-dose O-implanted Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 106 (1). 409-414 doi:10.1016/0168-583x(95)00741-5
Ramabadran, Uma B., Jackson, Howard E., Farlow, G.C. (1991) High-dose implantation of Si in SiO2: formation of Si crystallites after annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 637-642 doi:10.1016/0168-583x(91)95293-m
Liauh, H.R., Chen, M.C., Chen, J.F., Chen, L.J., Lur, W., Chu, C.H. (1993) Interfacial reactions of titanium thin films on ion implanted (001) Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 74 (1). 134-137 doi:10.1016/0168-583x(93)95030-9
Hsu, C.T., Ma, C.J., Chen, L.J. (1991) Radiation damage in As+ implanted TiSi2 films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 758-762 doi:10.1016/0168-583x(91)96274-o
Fan, W.D., Wang, W.Y. (1991) Dual implantation of Si+ + P+ into GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1086-1089 doi:10.1016/0168-583x(91)95770-e
 
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