Ramabadran, Uma B., Jackson, Howard E., Farlow, G.C. (1991) High-dose implantation of Si in SiO2: formation of Si crystallites after annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 637-642 doi:10.1016/0168-583x(91)95293-m
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | High-dose implantation of Si in SiO2: formation of Si crystallites after annealing | ||
| Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| Authors | Ramabadran, Uma B. | Author | |
| Jackson, Howard E. | Author | ||
| Farlow, G.C. | Author | ||
| Year | 1991 (July) | Volume | 59 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/0168-583x(91)95293-mSearch in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5597729 | Long-form Identifier | mindat:1:5:5597729:2 |
| GUID | 0 | ||
| Full Reference | Ramabadran, Uma B., Jackson, Howard E., Farlow, G.C. (1991) High-dose implantation of Si in SiO2: formation of Si crystallites after annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 637-642 doi:10.1016/0168-583x(91)95293-m | ||
| Plain Text | Ramabadran, Uma B., Jackson, Howard E., Farlow, G.C. (1991) High-dose implantation of Si in SiO2: formation of Si crystallites after annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 637-642 doi:10.1016/0168-583x(91)95293-m | ||
| In | (1991) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 59. Elsevier BV | ||
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