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Fried, M., Lohner, T., Jároli, E., Hajdu, C., Gyulai, J. (1991) Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 257-260 doi:10.1016/0168-583x(91)96173-i

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Reference TypeJournal (article/letter/editorial)
TitleNondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsFried, M.Author
Lohner, T.Author
Jároli, E.Author
Hajdu, C.Author
Gyulai, J.Author
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96173-iSearch in ResearchGate
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Mindat Ref. ID5596313Long-form Identifiermindat:1:5:5596313:8
GUID0
Full ReferenceFried, M., Lohner, T., Jároli, E., Hajdu, C., Gyulai, J. (1991) Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 257-260 doi:10.1016/0168-583x(91)96173-i
Plain TextFried, M., Lohner, T., Jároli, E., Hajdu, C., Gyulai, J. (1991) Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 257-260 doi:10.1016/0168-583x(91)96173-i
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

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Fried, M., Lohner, T., Jároli, E., Khanh, N. Q., Hajdu, C., Gyulai, J. (1992) Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by multiple‐angle‐of‐incidence single‐wavelength ellipsometry using different optical models. Journal of Applied Physics, 72 (6). 2197-2201 doi:10.1063/1.351611
Fried, M., Lohner, T., Vizkelethy, G., Jároli, E., Mezey, G., Gyulai, J. (1986) Investigation of solid phase epitaxial regrowth on ion-implanted silicon by backscattering spectrometry and ellipsometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 15 (1). 422-424 doi:10.1016/0168-583x(86)90336-8
Petrik, P., Lohner, T., Fried, M., Khánh, N.Q., Polgár, O., Gyulai, J. (1999) Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 147 (1). 84-89 doi:10.1016/s0168-583x(98)00566-7
Vanhellemont, J., Roussel, Ph., Maes, H.E. (1991) Spectroscopic ellipsometry for depth profiling of ion implanted materials. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 183-187 doi:10.1016/0168-583x(91)96158-h
Jároli, E., Khanh, N.Q., Mezey, G., Zsoldos, É., Kovács, B., Mojzes, I., Lohner, T., Kótai, E., Manuaba, A., Fried, M., Gyulai, J. (1986) Intermetallic compound formation of Ge-Ni and Ge-Al-Ni systems by furnace annealing and ion beam intermixing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 15 (1). 703-706 doi:10.1016/0168-583x(86)90395-2
Jároli, Erika, Pécz, B., Gyulai, J., Fried, M., Petrás, L., Zsoldos, Éva, Lohner, T., Mojzes, I. (1987) Effect of ion beam treatment on thermal annealing of GaAs-Au layer structures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 767-772 doi:10.1016/s0168-583x(87)80154-4
Fried, M., Lohner, T., Jároli, E., Vízkelethy, G., Kótai, E., Gyulai, J., Bíró, A., Ádám, J., Somogyi, M., Kerkow, H. (1987) Optical properties of thermally stabilized ion implantation amorphized silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 577-581 doi:10.1016/s0168-583x(87)80115-5
Boher, Pierre, Stehle, Jean Louis, Piel, Jean Philippe, Fried, M., Lohner, T., Polgar, O., Khanh, N.Q., Barsony, I. (1996) Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 112 (1). 160-168 doi:10.1016/0168-583x(95)01018-1
Zhang, L., Chandler, P.J., Townsend, P.D. (1991) Optical analysis of damage profiles in ion implanted LiNbO3. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1147-1152 doi:10.1016/0168-583x(91)95783-a
Budinov, H.I., Karpuzov, D.S. (1991) Defect depth profiles in B+ and As+ implanted Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1041-1044 doi:10.1016/0168-583x(91)95760-b
Jároli, E., Szilágyi, E., Khánh, N.Q., Pécz, B. (1996) Ion beam channeling study of cobalt implanted sapphire. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 118 (1). 123-127 doi:10.1016/0168-583x(95)01200-1
 
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