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Bond, P., Duckworth, D., Elliman, R.G., Henshaw, R., Johnson, S.T., Ridgway, M.C., Thornton, R.P., Williams, J.S., Byers, P., Chivers, D.J. (1991) A versatile WIBS 200 kV ion implanter for materials modification. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 511-516 doi:10.1016/0168-583x(91)96222-7

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Reference TypeJournal (article/letter/editorial)
TitleA versatile WIBS 200 kV ion implanter for materials modification
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsBond, P.Author
Duckworth, D.Author
Elliman, R.G.Author
Henshaw, R.Author
Johnson, S.T.Author
Ridgway, M.C.Author
Thornton, R.P.Author
Williams, J.S.Author
Byers, P.Author
Chivers, D.J.Author
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96222-7Search in ResearchGate
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Mindat Ref. ID5596412Long-form Identifiermindat:1:5:5596412:8
GUID0
Full ReferenceBond, P., Duckworth, D., Elliman, R.G., Henshaw, R., Johnson, S.T., Ridgway, M.C., Thornton, R.P., Williams, J.S., Byers, P., Chivers, D.J. (1991) A versatile WIBS 200 kV ion implanter for materials modification. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 511-516 doi:10.1016/0168-583x(91)96222-7
Plain TextBond, P., Duckworth, D., Elliman, R.G., Henshaw, R., Johnson, S.T., Ridgway, M.C., Thornton, R.P., Williams, J.S., Byers, P., Chivers, D.J. (1991) A versatile WIBS 200 kV ion implanter for materials modification. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 511-516 doi:10.1016/0168-583x(91)96222-7
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

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Ridgway, M.C., Johnson, S.T., Duckworth, D., Williams, J.S., Bond, P., Byers, P., Chivers, D.J. (1991) In-situ analysis during ion beam modification of Pt-Si structures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 164-167 doi:10.1016/0168-583x(91)95199-n
Williams, J.S., Ridgway, M.C., Elliman, R.G., Davies, J.A., Johnson, S.T., Palmer, G.R. (1991) MeV ion-beam annealing of semiconductor structures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 602-606 doi:10.1016/0168-583x(91)96240-l
Ridgway, M.C., Johnson, S.T., Elliman, R.G. (1991) Ion-beam induced epitaxial crystallization of III–V compound semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 454-457 doi:10.1016/0168-583x(91)95258-f
Thornton, R.P., Li, Y.H., Elliman, R.G., Williams, J.S. (1991) The annealing behaviour of ion-implanted Si studied using time-resolved reflectivity. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 598-601 doi:10.1016/0168-583x(91)96239-h
Elliman, R.G., Johnson, S.T., Pogany, A.P., Williams, J.S. (1985) Ion beam induced epitaxial crystallisation of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 310-315 doi:10.1016/0168-583x(85)90571-3
Thornton, R.P., Elliman, R.G., Williams, J.S. (1989) Epitaxial crystallisation of tin implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 387-390 doi:10.1016/0168-583x(89)90209-7
Williams, J.S., Short, K.T., Elliman, R.G., Ridgway, M.C., Goldberg, R. (1990) Ion-beam-induced amorphization and dynamic annealing processes in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 48 (1). 431-434 doi:10.1016/0168-583x(90)90154-m
Johnson, S.T., Elliman, R.G., Williams, J.S. (1989) Ion beam induced epitaxy of (100) and (111) GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 449-452 doi:10.1016/0168-583x(89)90823-9
Ridgway, M.C., Ellingboe, S.L., Elliman, R.G., Williams, J.S. (1994) High-energy ion implantation for electrical isolation of microelectronic devices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 89 (1). 290-297 doi:10.1016/0168-583x(94)00032-8
Elliman, R.G., Williams, J.S., Johnson, S.T., Pogany, A.P. (1986) Characterisation of MeV neon damage in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 15 (1). 439-442 doi:10.1016/0168-583x(86)90340-x
Ridgway, M.C., Elliman, R.G., Hauser, N. (1993) MeV In-ion implantation for electrical isolation of p+-InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 835-837 doi:10.1016/0168-583x(93)90693-z
 
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