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Bussmamnn, U., Robinson, A.K., Hemment, P.L.F. (1991) Energy and dose dependence of silicon top layer and buried oxide layer thicknesses in SIMOX substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 852-855 doi:10.1016/0168-583x(91)96292-s

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Reference TypeJournal (article/letter/editorial)
TitleEnergy and dose dependence of silicon top layer and buried oxide layer thicknesses in SIMOX substrates
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsBussmamnn, U.Author
Robinson, A.K.Author
Hemment, P.L.F.Author
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96292-sSearch in ResearchGate
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Mindat Ref. ID5596554Long-form Identifiermindat:1:5:5596554:3
GUID0
Full ReferenceBussmamnn, U., Robinson, A.K., Hemment, P.L.F. (1991) Energy and dose dependence of silicon top layer and buried oxide layer thicknesses in SIMOX substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 852-855 doi:10.1016/0168-583x(91)96292-s
Plain TextBussmamnn, U., Robinson, A.K., Hemment, P.L.F. (1991) Energy and dose dependence of silicon top layer and buried oxide layer thicknesses in SIMOX substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 852-855 doi:10.1016/0168-583x(91)96292-s
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

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Hatzopoulos, N., Bussmann, U., Robinson, A.K., Hemment, P.L.F. (1991) Buried insulator formation by nitrogen implantation at elevated temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 734-737 doi:10.1016/0168-583x(91)96268-p
Chater, R.J., Kilner, J.A., Reeson, K.J., Robinson, A.K., Hemment, P.L.F. (1991) High-dose oxygen implantation into silica. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 686-690 doi:10.1016/0168-583x(91)96258-m
Steigmeier, E.F., Harbeke, G., Reeson, K.J., Hemment, P.L.F., Robinson, A.K. (1989) Nondestructive assessment of SIMOX substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 304-307 doi:10.1016/0168-583x(89)90191-2
Starkov, V.V., Hemment, P.L.F., Vyatkin, A.F. (1991) Amorphisation and solid phase epitaxial regrowth of the silicon overlayer in SIMOX structures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 701-704 doi:10.1016/0168-583x(91)96261-i
Robinson, A.K., Marsh, C.D., Bussmann, U., Kilner, J.A., Li, Y., Vanhellemont, J., Reeson, K.J., Hemment, P.L.F., Booker, G.R. (1991) Formation of thin silicon films using low energy oxygen ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 555-560 doi:10.1016/0168-583x(91)96229-e
Bussmann, U., Hemment, P.L.F., Robinson, A.K., Starkov, V.V. (1991) Oxygen implantation through patterned masks: a method for forming insulated silicon device islands while maintaining a planar wafer surface. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 856-859 doi:10.1016/0168-583x(91)96293-t
Zhang, J.P., Hemment, P.L.F., Bussmam, U., Robinson, A.K., Castle, J.E., Liu, H.D., Watts, J.F., Newstead, S.M., Powell, A.R., Whall, T.E., Parker, E.H.C. (1991) The study of Si0.5Ge0.5 alloy implanted by high dose oxygen. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 691-696 doi:10.1016/0168-583x(91)96259-n
Castle, J.E., Liu, H.D., Watts, J.F., Zhang, J.P., Hemment, P.L.F., Bussmann, U., Robinson, A.K., Newstead, S.M., Powell, A.R., Whall, T.E., Parker, E.H.C. (1991) An investigation of Si0.5Ge0.5 alloy oxidation by high dose oxygen implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 697-700 doi:10.1016/0168-583x(91)96260-r
Li, Yupu, Marsh, C.D., Nejim, A., Chater, R.J., Kilner, J.A., Hemment, P.L.F. (1995) SIMOX: processing, layer parameters design, and defects control. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 99 (1). 479-483 doi:10.1016/0168-583x(95)00043-7
Marsh, C.D., Nejim, A., Li, Y., Booker, G.R., Hemment, P.L.F., Chater, R.J., Kilner, J.A. (1993) Control of the buried SiO2 layer thickness and Si defect density in SIMOX substrates β€” structural investigation and process optimisation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 74 (1). 197-203 doi:10.1016/0168-583x(93)95042-4
Bussmann, U., Hemment, P.L.F. (1990) Computer simulation of high fluence oxygen profiles in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 47 (1). 22-28 doi:10.1016/0168-583x(90)90042-s
 
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