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Roorda, S., Custer, J.S., Sinke, W.C., Poate, J.M., Jacobson, D.C., Polman, A., Spaepen, F. (1991) Structural relaxation in amorphous silicon and the role of network defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 344-352 doi:10.1016/0168-583x(91)95237-8

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Reference TypeJournal (article/letter/editorial)
TitleStructural relaxation in amorphous silicon and the role of network defects
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsRoorda, S.Author
Custer, J.S.Author
Sinke, W.C.Author
Poate, J.M.Author
Jacobson, D.C.Author
Polman, A.Author
Spaepen, F.Author
Year1991 (July)Volume59
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)95237-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5597615Long-form Identifiermindat:1:5:5597615:0
GUID0
Full ReferenceRoorda, S., Custer, J.S., Sinke, W.C., Poate, J.M., Jacobson, D.C., Polman, A., Spaepen, F. (1991) Structural relaxation in amorphous silicon and the role of network defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 344-352 doi:10.1016/0168-583x(91)95237-8
Plain TextRoorda, S., Custer, J.S., Sinke, W.C., Poate, J.M., Jacobson, D.C., Polman, A., Spaepen, F. (1991) Structural relaxation in amorphous silicon and the role of network defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 344-352 doi:10.1016/0168-583x(91)95237-8
In(1991) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 59. Elsevier BV

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Poate, J.M., Coffa, S., Jacobson, D.C., Polman, A., Roth, J.A., Olson, G.L., Roorda, S., Sinke, W., Custer, J.S., Thompson, M.O., Spaepen, F., Donovan, E. (1991) Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 533-543 doi:10.1016/0168-583x(91)96226-b
Polman, A., Jacobson, D.C., Lidgard, A., Poate, J.M., Arnold, G.W. (1991) Photoluminescence and structural characterization of MeV erbium-implanted silica glass. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1313-1316 doi:10.1016/0168-583x(91)95819-y
Wong-Leung, J., Williams, J.S., Elliman, R.G., Nygren, E., Eaglesham, D.J., Jacobson, D.C., Poate, J.M. (1995) Proximity gettering of Au to ion beam induced defects in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96 (1). 253-256 doi:10.1016/0168-583x(94)00494-3
Poate, J.M., Jacobson, D.C., Williams, J.S., Elliman, R.G., Boerma, D.O. (1987) Diffusion of implanted impurities in amorphous Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 480-483 doi:10.1016/s0168-583x(87)80095-2
Pearton, S.J., Poate, J.M., Sette, F., Gibson, J.M., Jacobson, D.C., Williams, J.S. (1987) Ion implantation in GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 369-380 doi:10.1016/s0168-583x(87)80074-5
Poate, J.M., Priolo, F., Jacobson, D.C., Batstone, J.L., Thompson, Michael O. (1989) Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 955-959 doi:10.1016/0168-583x(89)90333-9
Priolo, F., Poate, J.M., Jacobson, D.C., Batstone, J.L., Campisano, S.U. (1989) Radiation-enhanced diffusion of implanted impurities in amorphous Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 343-346 doi:10.1016/0168-583x(89)90799-4
(1991) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. doi:10.1016/0168-583x(91)95156-8
(1991) Previous confernces. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. doi:10.1016/0168-583x(91)95160-f
Cullis, A.G., Polman, A., Smith, P.W., Jacobson, D.C., Poate, J.M., Whitehouse, C.R. (1992) The nature of keV and MeV ion damage in AlxGa1−xAs/GaAs and AlAs/GaAs heterostructures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (4). 463-468 doi:10.1016/0168-583x(92)95378-5
Coffa, S., Priolo, F., Poate, J.M., Glarum, S.H. (1993) Conductivity changes and impurity-defect interactions in ion-implanted amorphous silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 603-606 doi:10.1016/0168-583x(93)96190-n
 
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