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Sealy, L., Barklie, R.C., Reeson, K.J., Brown, W.L., Jacobson, D.C. (1992) EPR and RBS study of defects produced by MeV ion implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (3). 384-387 doi:10.1016/0168-583x(92)95261-o

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Reference TypeJournal (article/letter/editorial)
TitleEPR and RBS study of defects produced by MeV ion implantation into silicon
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsSealy, L.Author
Barklie, R.C.Author
Reeson, K.J.Author
Brown, W.L.Author
Jacobson, D.C.Author
Year1992 (January)Volume62
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(92)95261-oSearch in ResearchGate
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Mindat Ref. ID5598467Long-form Identifiermindat:1:5:5598467:2
GUID0
Full ReferenceSealy, L., Barklie, R.C., Reeson, K.J., Brown, W.L., Jacobson, D.C. (1992) EPR and RBS study of defects produced by MeV ion implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (3). 384-387 doi:10.1016/0168-583x(92)95261-o
Plain TextSealy, L., Barklie, R.C., Reeson, K.J., Brown, W.L., Jacobson, D.C. (1992) EPR and RBS study of defects produced by MeV ion implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (3). 384-387 doi:10.1016/0168-583x(92)95261-o
In(1992, January) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 62 (3) Elsevier BV

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Sealy, L., Barklie, R.C., Brown, W.L., Jacobson, D.C. (1993) Annealing of defects created in silicon by MeV ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 528-531 doi:10.1016/0168-583x(93)96174-b
Barklie, R.C., Ennis, T.J., Reeson, K.J., Hemment, P.L.F. (1992) E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 65 (1). 93-96 doi:10.1016/0168-583x(92)95019-n
O'Raifeartaigh, C., Barklie, R.C., Lindner, J.K.N. (2004) EPR study of defects produced by MeV Ag ion implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 217 (3). 442-448 doi:10.1016/j.nimb.2003.11.081
Sealy, L., Barklie, R.C., Lulli, G., Nipoti, R., Balboni, R., Milita, S., Servidori, M. (1995) EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96 (1). 215-218 doi:10.1016/0168-583x(94)00485-4
Barklie, R.C., Ennis, T.J., Hemment, P.L.F., Reeson, K. (1988) Defects in SiO2 in buried-oxide structures formed by O+ implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 32 (1). 433-436 doi:10.1016/0168-583x(88)90251-0
Stephens, K.G., Reeson, K.J., Sealy, B.J., Gwilliam, R.M., Hemment, P.L.F. (1990) The formation of compound layers in silicon by ion beam synthesis. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 50 (1). 368-378 doi:10.1016/0168-583x(90)90383-6
Lindner, J.K.N., Zuschlag, R., te Kaat, E.H. (1992) Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (3). 314-318 doi:10.1016/0168-583x(92)95248-p
Stephens, K.G., Sealy, B.J., Gwilliam, R.M., Reeson, K.J. (1991) High energy implantation at the University of Surrey. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 56. 630-633 doi:10.1016/0168-583x(91)96112-x
Schempp, A. (1992) RFQ accelerators for ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (3). 425-430 doi:10.1016/0168-583x(92)95270-2
Poate, J.M., Priolo, F., Jacobson, D.C., Batstone, J.L., Thompson, Michael O. (1989) Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 955-959 doi:10.1016/0168-583x(89)90333-9
Sayama, H., Kinomura, A., Yuba, Y., Takai, M. (1993) Near-surface defects formed by MeV ion implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 587-590 doi:10.1016/0168-583x(93)96187-h
 
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