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Bachmann, T., Wesch, W., Gärtner, K., Wendler, E. (1992) Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 64-67 doi:10.1016/0168-583x(92)95170-v

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Reference TypeJournal (article/letter/editorial)
TitleDifferences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsBachmann, T.Author
Wesch, W.Author
Gärtner, K.Author
Wendler, E.Author
Year1992 (January)Volume63
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(92)95170-vSearch in ResearchGate
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Mindat Ref. ID5598564Long-form Identifiermindat:1:5:5598564:4
GUID0
Full ReferenceBachmann, T., Wesch, W., Gärtner, K., Wendler, E. (1992) Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 64-67 doi:10.1016/0168-583x(92)95170-v
Plain TextBachmann, T., Wesch, W., Gärtner, K., Wendler, E. (1992) Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 64-67 doi:10.1016/0168-583x(92)95170-v
In(1992, January) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 63 (1) Elsevier BV

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Wesch, W., Wendler, E., Gärtner, K. (1992) Nucleation of point defects in low-fluence ion-implanted GaAs and GaP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 52-55 doi:10.1016/0168-583x(92)95167-p
Götz, G., Gärtner, K., Wesch, W. (1990) Investigation of point defects by temperature-dependent dechanneling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 50 (1). 131-134 doi:10.1016/0168-583x(90)90344-t
Wendler, E., Müller, P., Bachmann, T., Wesch, W. (1993) Defect production, annealing and electrical activation in Si+ implanted InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 711-715 doi:10.1016/0168-583x(93)96215-x
Wendler, E., Opfermann, T., Müller, P., Wesch, W. (1995) Temperature and dose dependence of damage production in Si+ and Se+ implanted InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 106 (1). 303-307 doi:10.1016/0168-583x(95)00723-7
Weber, B., Wendler, E., Gärtner, K., Stock, D.M., Wesch, W. (1996) Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 118 (1). 113-118 doi:10.1016/0168-583x(95)01198-6
Wendler, E., Wesch, W., Götz, G. (1992) Investigation of the amorphization process in ion implanted AIIIBV compounds. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 47-51 doi:10.1016/0168-583x(92)95166-o
Götz, G., Gärtner, K., Wesch, W. (1992) Investigation of defects by RBS-channeling methods. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 59-63 doi:10.1016/0168-583x(92)95169-r
Bachmann, T., Schippel, S., Wendler, E., Wesch, W., Richter, U., Witthuhn, W. (1994) Comparison of MeV-implanted GaAs and InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 89 (1). 168-173 doi:10.1016/0168-583x(94)95166-7
Wendler, E., Wesch, W., Götz, G. (1990) Influence of the dose rate on the damage production in ion implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 52 (1). 57-62 doi:10.1016/0168-583x(90)90601-p
Heft, A., Wendler, E., Heindl, J., Bachmann, T., Glaser, E., Strunk, H.P., Wesch, W. (1996) Damage production and annealing of ion implanted silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 113 (1). 239-243 doi:10.1016/0168-583x(95)01304-0
Wesch, W., Gärtner, K., Jordanov, A., Götz, G. (1990) Investigation of defects in GaAs by dechanneling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 45 (1). 446-449 doi:10.1016/0168-583x(90)90872-r
 
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