Heft, A., Wendler, E., Heindl, J., Bachmann, T., Glaser, E., Strunk, H.P., Wesch, W. (1996) Damage production and annealing of ion implanted silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 113 (1). 239-243 doi:10.1016/0168-583x(95)01304-0
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Damage production and annealing of ion implanted silicon carbide | ||
| Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| Authors | Heft, A. | Author | |
| Wendler, E. | Author | ||
| Heindl, J. | Author | ||
| Bachmann, T. | Author | ||
| Glaser, E. | Author | ||
| Strunk, H.P. | Author | ||
| Wesch, W. | Author | ||
| Year | 1996 (June) | Volume | 113 |
| Issue | 1 | ||
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/0168-583x(95)01304-0Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5609610 | Long-form Identifier | mindat:1:5:5609610:5 |
| GUID | 0 | ||
| Full Reference | Heft, A., Wendler, E., Heindl, J., Bachmann, T., Glaser, E., Strunk, H.P., Wesch, W. (1996) Damage production and annealing of ion implanted silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 113 (1). 239-243 doi:10.1016/0168-583x(95)01304-0 | ||
| Plain Text | Heft, A., Wendler, E., Heindl, J., Bachmann, T., Glaser, E., Strunk, H.P., Wesch, W. (1996) Damage production and annealing of ion implanted silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 113 (1). 239-243 doi:10.1016/0168-583x(95)01304-0 | ||
| In | (1996, June) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 113 (1) Elsevier BV | ||
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