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Wendler, E., Heft, A., Wesch, W. (1998) Ion-beam induced damage and annealing behaviour in SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 141 (1). 105-117 doi:10.1016/s0168-583x(98)00083-4

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Reference TypeJournal (article/letter/editorial)
TitleIon-beam induced damage and annealing behaviour in SiC
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsWendler, E.Author
Heft, A.Author
Wesch, W.Author
Year1998 (May)Volume141
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0168-583x(98)00083-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5615178Long-form Identifiermindat:1:5:5615178:5
GUID0
Full ReferenceWendler, E., Heft, A., Wesch, W. (1998) Ion-beam induced damage and annealing behaviour in SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 141 (1). 105-117 doi:10.1016/s0168-583x(98)00083-4
Plain TextWendler, E., Heft, A., Wesch, W. (1998) Ion-beam induced damage and annealing behaviour in SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 141 (1). 105-117 doi:10.1016/s0168-583x(98)00083-4
In(1998, May) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 141 (1) Elsevier BV

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Wesch, W, Heft, A, Hobert, H, Peiter, G, Wendler, E, Bachmann, T (1998) High dose MeV oxygen ion implantation into SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 141 (1). 160-163 doi:10.1016/s0168-583x(98)00184-0
Wesch, W, Opfermann, Th, Bachmann, T (1998) Investigation of radiation damage in ion implanted KTiOPO4. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 141 (1). 338-342 doi:10.1016/s0168-583x(98)00074-3
Wendler, E., Heft, A., Wesch, W., Peiter, G., Dunken, H.H. (1997) Annealing studies of B+ implanted 6Hî—¸SiC by RBS and optical sub-gap spectroscopy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 127. 341-346 doi:10.1016/s0168-583x(96)00953-6
Heft, A., Wendler, E., Heindl, J., Bachmann, T., Glaser, E., Strunk, H.P., Wesch, W. (1996) Damage production and annealing of ion implanted silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 113 (1). 239-243 doi:10.1016/0168-583x(95)01304-0
Wendler, E., Breeger, B., Wesch, W. (2001) Anomalous damaging behaviour of AlAs during ion implantation at 15 K. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 175. 78-82 doi:10.1016/s0168-583x(00)00581-4
Wesch, W., Heft, A., Heindl, J., Strunk, H.P., Bachmann, T., Glaser, E., Wendler, E. (1995) Investigation of radiation damage in ion implanted and annealed SiC layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 106 (1). 339-345 doi:10.1016/0168-583x(96)80027-9
Wendler, E., Heft, A., Zammit, U., Glaser, E., Marinelli, M., Wesch, W. (1996) Sub-gap optical properties of ion implanted SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 116 (1). 398-403 doi:10.1016/0168-583x(96)00131-0
Wesch, W, Wendler, E, Dharmarasu, N (2001) Effects of the ion energy on damage production in MeV ion-implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 175. 257-261 doi:10.1016/s0168-583x(00)00634-0
Breeger, B, Wendler, E, Schubert, Ch, Wesch, W (1999) In situ RBS investigation of damage production during ion implantation in AlxGa1−xAs at 20 K. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 148 (1). 468-473 doi:10.1016/s0168-583x(98)00736-8
Wesch, W., Heft, A., Menzel, R., Bachmann, T., Peiter, G., Hobert, H., Höche, T., Dannberg, P., Bräuer, A. (1999) Ion beam processing of SiC for optical application. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 148 (1). 545-550 doi:10.1016/s0168-583x(98)00826-x
Wesch, W., Heft, A., Wendler, E., Bachmann, T., Glaser, E. (1995) High temperature ion implantation of silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96 (1). 335-338 doi:10.1016/0168-583x(94)00513-3
 
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