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Yokota, Katsuhiro, Yano, Yoshikazu, Nakamura, Kazuhiro, Ohnishi, Masami, Miyashita, Fumiyoshi (2006) Effects of oxygen ion beam application on crystalline structures of TiO2 films deposited on Si wafers by an ion beam assisted deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242 (1). 393-395 doi:10.1016/j.nimb.2005.08.170

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Reference TypeJournal (article/letter/editorial)
TitleEffects of oxygen ion beam application on crystalline structures of TiO2 films deposited on Si wafers by an ion beam assisted deposition
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsYokota, KatsuhiroAuthor
Yano, YoshikazuAuthor
Nakamura, KazuhiroAuthor
Ohnishi, MasamiAuthor
Miyashita, FumiyoshiAuthor
Year2006 (January)Volume242
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2005.08.170Search in ResearchGate
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Mindat Ref. ID5633260Long-form Identifiermindat:1:5:5633260:9
GUID0
Full ReferenceYokota, Katsuhiro, Yano, Yoshikazu, Nakamura, Kazuhiro, Ohnishi, Masami, Miyashita, Fumiyoshi (2006) Effects of oxygen ion beam application on crystalline structures of TiO2 films deposited on Si wafers by an ion beam assisted deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242 (1). 393-395 doi:10.1016/j.nimb.2005.08.170
Plain TextYokota, Katsuhiro, Yano, Yoshikazu, Nakamura, Kazuhiro, Ohnishi, Masami, Miyashita, Fumiyoshi (2006) Effects of oxygen ion beam application on crystalline structures of TiO2 films deposited on Si wafers by an ion beam assisted deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242 (1). 393-395 doi:10.1016/j.nimb.2005.08.170
In(2006, January) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 242 (1) Elsevier BV

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Yokota, Katsuhiro, Kimura, Hidekazu, Miyashita, Fumiyoshi (2007) Crystalline lattice phase-conversion on thin boron nitride films deposited on silicon wafers by an ion beam assisted deposition method. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 257 (1). 459-462 doi:10.1016/j.nimb.2007.01.097
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